Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment

Handle URI:
http://hdl.handle.net/10754/625977
Title:
Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment
Authors:
Abdallah, Amir; Daif, Ounsi El; Aïssa, Brahim; Kivambe, Maulid; Tabet, Nouar; Seif, Johannes; Haschke, Jan; Cattin, Jean; Boccard, Mathieu; De Wolf, Stefaan ( 0000-0003-1619-9061 ) ; Ballif, Christophe
Abstract:
We report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division
Citation:
Abdallah A, Daif OE, Aïssa B, Kivambe M, Tabet N, et al. (2017) Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment. Energy Procedia 124: 331–337. Available: http://dx.doi.org/10.1016/j.egypro.2017.09.307.
Publisher:
Elsevier BV
Journal:
Energy Procedia
Conference/Event name:
7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Issue Date:
22-Sep-2017
DOI:
10.1016/j.egypro.2017.09.307
Type:
Article
ISSN:
1876-6102
Sponsors:
This work has been carried out within the Qatar Environment and Energy Research Institute (QEERI) and Ecole Polytechnique Fédérale de Lausanne (EPFL), Photovoltaics and Thin-Film Electronics Laboratory (PV-lab) collaboration.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S1876610217342789
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAbdallah, Amiren
dc.contributor.authorDaif, Ounsi Elen
dc.contributor.authorAïssa, Brahimen
dc.contributor.authorKivambe, Mauliden
dc.contributor.authorTabet, Nouaren
dc.contributor.authorSeif, Johannesen
dc.contributor.authorHaschke, Janen
dc.contributor.authorCattin, Jeanen
dc.contributor.authorBoccard, Mathieuen
dc.contributor.authorDe Wolf, Stefaanen
dc.contributor.authorBallif, Christopheen
dc.date.accessioned2017-10-30T07:55:30Z-
dc.date.available2017-10-30T07:55:30Z-
dc.date.issued2017-09-22en
dc.identifier.citationAbdallah A, Daif OE, Aïssa B, Kivambe M, Tabet N, et al. (2017) Towards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environment. Energy Procedia 124: 331–337. Available: http://dx.doi.org/10.1016/j.egypro.2017.09.307.en
dc.identifier.issn1876-6102en
dc.identifier.doi10.1016/j.egypro.2017.09.307en
dc.identifier.urihttp://hdl.handle.net/10754/625977-
dc.description.abstractWe report on the performance of Silicon Heterojunction (SHJ) solar cell under high operating temperature and varying irradiance conditions typical to desert environment. In order to define the best solar cell configuration that resist high operating temperature conditions, two different intrinsic passivation layers were tested, namely, an intrinsic amorphous silicon a-SiO:H with CO/SiH ratio of 0.4 and a-SiOx:H with CO/SiH ratio of 0.8, and the obtained performance were compared with those of a standard SHJ cell configuration having a-Si:H passivation layer. Our results showed how the short circuit current density J, and fill factor FF temperature-dependency are impacted by the cell's configuration. While the short circuit current density J for cells with a-SiO:H layers was found to improve as compared with that of standard a-Si:H layer, introducing the intrinsic amorphous silicon oxide (a-SiO:H) layer with CO/SiH ratio of 0.8 has resulted in a reduction of the FF at room temperature due to hindering the carrier transport by the band structure. Besides, this FF was found to improve as the temperature increases from 15 to 45°C, thus, a positive FF temperature coefficient.en
dc.description.sponsorshipThis work has been carried out within the Qatar Environment and Energy Research Institute (QEERI) and Ecole Polytechnique Fédérale de Lausanne (EPFL), Photovoltaics and Thin-Film Electronics Laboratory (PV-lab) collaboration.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S1876610217342789en
dc.rightsUnder a Creative Commons licenseen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectcurrent-voltage curveen
dc.subjectirradianceen
dc.subjectSilicon heterojucntionen
dc.subjecttemeprature coefficienten
dc.titleTowards an optimum silicon heterojunction solar cell configuration for high temperature and high light intensity environmenten
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalEnergy Procediaen
dc.conference.date2017-04-03 to 2017-04-05en
dc.conference.name7th International Conference on Silicon Photovoltaics, SiliconPV 2017en
dc.conference.locationFreiburg, DEUen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionQatar Environment and Energy Research Institute (QEERI), HBKU, Qatar Foundation, P.O. Box 34110, Doha, , , , Qataren
dc.contributor.institutionEedama Advisors Limited, Masdar City, Abu Dhabi, , United Arab Emiratesen
dc.contributor.institutionCollege of Science and Engineering, HBKU, P.O. Box 34110, Doha, , Qataren
dc.contributor.institutionMeyer Burger, , Switzerlanden
dc.contributor.institutionPhotovoltaics and Thin-Film Electronics Laboratory (PV-lab), Institute of Microengineering, Ecole Polytechnique Fédérale de Lausanne, Rue de la Maladière 71B, Neuchâtel, CH-2002, , Switzerlanden
kaust.authorDe Wolf, Stefaanen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.