Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

Handle URI:
http://hdl.handle.net/10754/625869
Title:
Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution
Authors:
Faber, Hendrik; Das, Satyajit; Lin, Yen-Hung; Pliatsikas, Nikos; Zhao, Kui ( 0000-0002-4946-870X ) ; Kehagias, Thomas ( 0000-0001-9745-265X ) ; Dimitrakopulos, George ( 0000-0001-8499-2198 ) ; Amassian, Aram ( 0000-0002-5734-1194 ) ; Patsalas, Panos A.; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Faber H, Das S, Lin Y-H, Pliatsikas N, Zhao K, et al. (2017) Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution. Science Advances 3: e1602640. Available: http://dx.doi.org/10.1126/sciadv.1602640.
Publisher:
American Association for the Advancement of Science (AAAS)
Journal:
Science Advances
Issue Date:
28-Apr-2017
DOI:
10.1126/sciadv.1602640
Type:
Article
ISSN:
2375-2548
Sponsors:
H.F., Y.-H.L., and T.D.A. were supported by the European Research Council AMPRO project no. 280221.
Additional Links:
http://advances.sciencemag.org/content/3/3/e1602640
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorFaber, Hendriken
dc.contributor.authorDas, Satyajiten
dc.contributor.authorLin, Yen-Hungen
dc.contributor.authorPliatsikas, Nikosen
dc.contributor.authorZhao, Kuien
dc.contributor.authorKehagias, Thomasen
dc.contributor.authorDimitrakopulos, Georgeen
dc.contributor.authorAmassian, Aramen
dc.contributor.authorPatsalas, Panos A.en
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-10-17T08:48:35Z-
dc.date.available2017-10-17T08:48:35Z-
dc.date.issued2017-04-28en
dc.identifier.citationFaber H, Das S, Lin Y-H, Pliatsikas N, Zhao K, et al. (2017) Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution. Science Advances 3: e1602640. Available: http://dx.doi.org/10.1126/sciadv.1602640.en
dc.identifier.issn2375-2548en
dc.identifier.doi10.1126/sciadv.1602640en
dc.identifier.urihttp://hdl.handle.net/10754/625869-
dc.description.abstractThin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.en
dc.description.sponsorshipH.F., Y.-H.L., and T.D.A. were supported by the European Research Council AMPRO project no. 280221.en
dc.publisherAmerican Association for the Advancement of Science (AAAS)en
dc.relation.urlhttp://advances.sciencemag.org/content/3/3/e1602640en
dc.rightsThis is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc/4.0/en
dc.subjectmetal oxide semiconductorsen
dc.subjectsolution processingen
dc.subjectFlexible Electronicsen
dc.subjectheterojunction transistorsen
dc.subjectthin-film transistorsen
dc.titleHeterojunction oxide thin-film transistors with unprecedented electron mobility grown from solutionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalScience Advancesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, U.K.en
dc.contributor.institutionDepartment of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece.en
kaust.authorZhao, Kuien
kaust.authorAmassian, Aramen
kaust.authorAnthopoulos, Thomas D.en
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