Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

Handle URI:
http://hdl.handle.net/10754/625850
Title:
Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon
Authors:
Lin, Che-Yu; Zhu, Xiaodan; Tsai, Shin-Hung; Tsai, Shiao-Po; Lei, Sidong; Li, Ming-Yang; Shi, Yumeng; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Huang, Shyh-Jer; Wu, Wen-Fa; Yeh, Wen-Kuan; Su, Yan-Kuin; Wang, Kang L.; Lan, Yann-Wen
Abstract:
High-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Lin C-Y, Zhu X, Tsai S-H, Tsai S-P, Lei S, et al. (2017) Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS Nano. Available: http://dx.doi.org/10.1021/acsnano.7b05012.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
4-Oct-2017
DOI:
10.1021/acsnano.7b05012
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
This work was supported by the National Science Council, Taiwan under contract No. MOST 105-2112-M-492-003-MY3. This work was also in part supported by the National Nano Device Laboratories and Core facilities at UCLA. We would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technologies (CEGN).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsnano.7b05012
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLin, Che-Yuen
dc.contributor.authorZhu, Xiaodanen
dc.contributor.authorTsai, Shin-Hungen
dc.contributor.authorTsai, Shiao-Poen
dc.contributor.authorLei, Sidongen
dc.contributor.authorLi, Ming-Yangen
dc.contributor.authorShi, Yumengen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorHuang, Shyh-Jeren
dc.contributor.authorWu, Wen-Faen
dc.contributor.authorYeh, Wen-Kuanen
dc.contributor.authorSu, Yan-Kuinen
dc.contributor.authorWang, Kang L.en
dc.contributor.authorLan, Yann-Wenen
dc.date.accessioned2017-10-11T12:03:22Z-
dc.date.available2017-10-11T12:03:22Z-
dc.date.issued2017-10-04en
dc.identifier.citationLin C-Y, Zhu X, Tsai S-H, Tsai S-P, Lei S, et al. (2017) Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon. ACS Nano. Available: http://dx.doi.org/10.1021/acsnano.7b05012.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.7b05012en
dc.identifier.urihttp://hdl.handle.net/10754/625850-
dc.description.abstractHigh-frequency operation with ultra-thin, lightweight and extremely flexible semiconducting electronics are highly desirable for the development of mobile devices, wearable electronic systems and defense technologies. In this work, the first experimental observation of quasi-heterojunction bipolar transistors utilizing a monolayer of the lateral WSe2-MoS2 junctions as the conducting p-n channel is demonstrated. Both lateral n-p-n and p-n-p heterojunction bipolar transistors are fabricated to exhibit the output characteristics and current gain. A maximum common-emitter current gain of around 3 is obtained in our prototype two-dimensional quasi-heterojunction bipolar transistors. Interestingly, we also observe the negative differential resistance in the electrical characteristics. A potential mechanism is that the negative differential resistance is induced by resonant tunneling phenomenon due to the formation of quantum well under applying high bias voltages. Our results open the door to two-dimensional materials for high-frequency, high-speed, high-density and flexible electronics.en
dc.description.sponsorshipThis work was supported by the National Science Council, Taiwan under contract No. MOST 105-2112-M-492-003-MY3. This work was also in part supported by the National Nano Device Laboratories and Core facilities at UCLA. We would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technologies (CEGN).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.7b05012en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.7b05012.en
dc.titleAtomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenonen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.eprint.versionPost-printen
dc.contributor.institutionInstitute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.en
dc.contributor.institutionDepartment of Electrical Engineering, University of California at Los Angeles, Los Angeles, California, United States.en
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, Taiwan.en
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen 518060, Chinaen
dc.contributor.institutionAdvanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan.en
dc.contributor.institutionNational Nano Device Laboratories, National Applied Research Laboratories, Hsinchu 30078, Taiwan.en
dc.contributor.institutionDepartment of Electrical Engineering, Kun Shan University, Tainan 710, Taiwan.en
dc.contributor.institutionDepartment of Physics, National Taiwan Normal University, Taipei 11677, Taiwanen
kaust.authorLi, Lain-Jongen
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