Extreme ultraviolet resist materials for sub-7 nm patterning

Handle URI:
http://hdl.handle.net/10754/625795
Title:
Extreme ultraviolet resist materials for sub-7 nm patterning
Authors:
Li, Li ( 0000-0003-2308-916X ) ; Liu, Xuan; Pal, Shyam; Wang, Shulan ( 0000-0003-0098-5682 ) ; Ober, Christopher K.; Giannelis, Emmanuel P.
Abstract:
Continuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.
Citation:
Li L, Liu X, Pal S, Wang S, Ober CK, et al. (2017) Extreme ultraviolet resist materials for sub-7 nm patterning. Chem Soc Rev 46: 4855–4866. Available: http://dx.doi.org/10.1039/c7cs00080d.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Chem. Soc. Rev.
Issue Date:
26-Jun-2017
DOI:
10.1039/c7cs00080d
Type:
Article
ISSN:
0306-0012; 1460-4744
Sponsors:
The authors gratefully acknowledge the support from GlobalFoundries and Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU). Dr L. Li and Dr X. Liu contributed equally to this work.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Lien
dc.contributor.authorLiu, Xuanen
dc.contributor.authorPal, Shyamen
dc.contributor.authorWang, Shulanen
dc.contributor.authorOber, Christopher K.en
dc.contributor.authorGiannelis, Emmanuel P.en
dc.date.accessioned2017-10-04T14:59:16Z-
dc.date.available2017-10-04T14:59:16Z-
dc.date.issued2017-06-26en
dc.identifier.citationLi L, Liu X, Pal S, Wang S, Ober CK, et al. (2017) Extreme ultraviolet resist materials for sub-7 nm patterning. Chem Soc Rev 46: 4855–4866. Available: http://dx.doi.org/10.1039/c7cs00080d.en
dc.identifier.issn0306-0012en
dc.identifier.issn1460-4744en
dc.identifier.doi10.1039/c7cs00080den
dc.identifier.urihttp://hdl.handle.net/10754/625795-
dc.description.abstractContinuous ongoing development of dense integrated circuits requires significant advancements in nanoscale patterning technology. As a key process in semiconductor high volume manufacturing (HVM), high resolution lithography is crucial in keeping with Moore's law. Currently, lithography technology for the sub-7 nm node and beyond has been actively investigated approaching atomic level patterning. EUV technology is now considered to be a potential alternative to HVM for replacing in some cases ArF immersion technology combined with multi-patterning. Development of innovative resist materials will be required to improve advanced fabrication strategies. In this article, advancements in novel resist materials are reviewed to identify design criteria for establishment of a next generation resist platform. Development strategies and the challenges in next generation resist materials are summarized and discussed.en
dc.description.sponsorshipThe authors gratefully acknowledge the support from GlobalFoundries and Cornell Nanoscale Science and Technology (CNF), the Cornell Center for Materials Research (CCMR) and the KAUST-Cornell Center of Energy and Sustainability (KAUST-CU). Dr L. Li and Dr X. Liu contributed equally to this work.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleExtreme ultraviolet resist materials for sub-7 nm patterningen
dc.typeArticleen
dc.identifier.journalChem. Soc. Rev.en
dc.contributor.institutionDepartment of Advanced Technology Development, GlobalFoundries, Malta, USAen
dc.contributor.institutionDepartment of Chemistry, Northeastern University, Shenyang, Chinaen
dc.contributor.institutionDepartment of Materials Science and Engineering, Cornell University, Ithaca, USAen
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