Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition

Handle URI:
http://hdl.handle.net/10754/625782
Title:
Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition
Authors:
Foronda, Humberto M.; Mazumder, Baishakhi; Young, Erin C.; Laurent, Matthew A.; Li, Youli; DenBaars, Steven P.; Speck, James S.
Abstract:
Coherent InxAl1−xN (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and after InxAl1−xN deposition. The In composition and film thickness were verified using atom probe tomography and high resolution X-ray diffraction, respectively. Ex-situ curvature measurements were performed to analyze the curvature before and after the InxAl1−xN deposition. At ∼In0.18Al0.82N, no change in curvature was observed following InAlN deposition; confirming that films of this composition are latticed matched to GaN, obeying Vegard’s law. The relaxed a0- and c0- lattice parameters of InxAl1−xN were experimentally determined and in agreement with lattice parameters predicted by Vegard’s law.
Citation:
Foronda HM, Mazumder B, Young EC, Laurent MA, Li Y, et al. (2017) Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition. Journal of Crystal Growth 475: 127–135. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.06.008.
Publisher:
Elsevier BV
Journal:
Journal of Crystal Growth
Issue Date:
19-Jun-2017
DOI:
10.1016/j.jcrysgro.2017.06.008
Type:
Article
ISSN:
0022-0248
Sponsors:
This work was supported by the King Abduallah Center for Science and Technology and King Abdullah University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara for providing access and training to their laboratories. Support for JSS was provided by ONR through program N00014-15-1-2074 (Paul Maki, Program Manager).
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Full metadata record

DC FieldValue Language
dc.contributor.authorForonda, Humberto M.en
dc.contributor.authorMazumder, Baishakhien
dc.contributor.authorYoung, Erin C.en
dc.contributor.authorLaurent, Matthew A.en
dc.contributor.authorLi, Youlien
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorSpeck, James S.en
dc.date.accessioned2017-10-04T14:59:15Z-
dc.date.available2017-10-04T14:59:15Z-
dc.date.issued2017-06-19en
dc.identifier.citationForonda HM, Mazumder B, Young EC, Laurent MA, Li Y, et al. (2017) Analysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor deposition. Journal of Crystal Growth 475: 127–135. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.06.008.en
dc.identifier.issn0022-0248en
dc.identifier.doi10.1016/j.jcrysgro.2017.06.008en
dc.identifier.urihttp://hdl.handle.net/10754/625782-
dc.description.abstractCoherent InxAl1−xN (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and after InxAl1−xN deposition. The In composition and film thickness were verified using atom probe tomography and high resolution X-ray diffraction, respectively. Ex-situ curvature measurements were performed to analyze the curvature before and after the InxAl1−xN deposition. At ∼In0.18Al0.82N, no change in curvature was observed following InAlN deposition; confirming that films of this composition are latticed matched to GaN, obeying Vegard’s law. The relaxed a0- and c0- lattice parameters of InxAl1−xN were experimentally determined and in agreement with lattice parameters predicted by Vegard’s law.en
dc.description.sponsorshipThis work was supported by the King Abduallah Center for Science and Technology and King Abdullah University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara for providing access and training to their laboratories. Support for JSS was provided by ONR through program N00014-15-1-2074 (Paul Maki, Program Manager).en
dc.publisherElsevier BVen
dc.subjectIndium aluminum nitride (B1)en
dc.subjectGallium nitride (B1)en
dc.subjectMetalorganic chemical vapor deposition (A3)en
dc.subjectAtom probe tomography (A1)en
dc.subjectX-ray diffraction (A1)en
dc.subjectLattice matched (A1)en
dc.titleAnalysis of Vegard’s law for lattice matching In x Al 1−x N to GaN by metalorganic chemical vapor depositionen
dc.typeArticleen
dc.identifier.journalJournal of Crystal Growthen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA 93106, United Statesen
dc.contributor.institutionElectrical & Computer Engineering Department, University of California, Santa Barbara, 93106, United Statesen
dc.contributor.institutionMaterials Research Laboratory, University of California, Santa Barbara, CA 93106, United Statesen
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