Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer

Handle URI:
http://hdl.handle.net/10754/625721
Title:
Enhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer
Authors:
Chand, Umesh; Alawein, Meshal ( 0000-0003-4561-3225 ) ; Fariborzi, Hossein ( 0000-0002-7828-0239 )
Abstract:
We propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.
KAUST Department:
King Abdullah University of Science and Technology
Citation:
Chand U, Alawein M, Fariborzi H (2017) Enhancement of Endurance in HfO 2 -Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer . ECS Transactions 77: 1971–1976. Available: http://dx.doi.org/10.1149/07711.1971ecst.
Publisher:
The Electrochemical Society
Journal:
ECS Transactions
Issue Date:
5-Aug-2017
DOI:
10.1149/07711.1971ecst
Type:
Article
ISSN:
1938-6737; 1938-5862
Sponsors:
This work is supported by the Nanofabrication Core Laboratories at King Abdullah University of Science and Technology, Saudi Arabia.
Additional Links:
http://ecst.ecsdl.org/content/77/11/1971
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorChand, Umeshen
dc.contributor.authorAlawein, Meshalen
dc.contributor.authorFariborzi, Hosseinen
dc.date.accessioned2017-10-03T12:49:36Z-
dc.date.available2017-10-03T12:49:36Z-
dc.date.issued2017-08-05en
dc.identifier.citationChand U, Alawein M, Fariborzi H (2017) Enhancement of Endurance in HfO 2 -Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layer . ECS Transactions 77: 1971–1976. Available: http://dx.doi.org/10.1149/07711.1971ecst.en
dc.identifier.issn1938-6737en
dc.identifier.issn1938-5862en
dc.identifier.doi10.1149/07711.1971ecsten
dc.identifier.urihttp://hdl.handle.net/10754/625721-
dc.description.abstractWe propose a new method to improve resistive switching properties in HfO2 based CBRAM crossbar structure device by introducing a TaN thin diffusion blocking layer between the Cu top electrode and HfO2 switching layer. The Cu/TaN/HfO2/TiN device structure exhibits high resistance ratio of OFF/ON states without any degradation in switching during endurance test. The improvement in the endurance properties of the Cu/TaN/HfO2/TiN CBRAM device is thus attributed to the relatively low amount of Cu migration into HfO2 switching layer.en
dc.description.sponsorshipThis work is supported by the Nanofabrication Core Laboratories at King Abdullah University of Science and Technology, Saudi Arabia.en
dc.publisherThe Electrochemical Societyen
dc.relation.urlhttp://ecst.ecsdl.org/content/77/11/1971en
dc.titleEnhancement of Endurance in HfO2-Based CBRAM Device by Introduction of a TaN Diffusion Blocking Layeren
dc.typeArticleen
dc.contributor.departmentKing Abdullah University of Science and Technologyen
dc.identifier.journalECS Transactionsen
kaust.authorChand, Umeshen
kaust.authorAlawein, Meshalen
kaust.authorFariborzi, Hosseinen
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