Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics

Handle URI:
http://hdl.handle.net/10754/625720
Title:
Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics
Authors:
Alshammari, Fwzah H.; Hota, Mrinal Kanti ( 0000-0003-4336-8051 ) ; Wang, Zhenwei; Al-jawhari, Hala; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Atomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin-film transistors fabricated with SnO2 gates show excellent transistor properties including saturation mobility of 15.3 cm2 V−1 s−1, a low subthreshold swing of ≈130 mV dec−1, a high on/off ratio of ≈109, and an excellent electrical stability under constant-voltage stressing conditions to the gate terminal. Moreover, the SnO2-gated thin-film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11-stage NMOS inverter-based ring oscillators. These results show that SnO2 can effectively replace ITO in transparent electronics and sensor applications.
KAUST Department:
Materials Science and Engineering Program
Citation:
Alshammari FH, Hota MK, Wang Z, Al-jawhari Hala, Alshareef HN (2017) Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics. Advanced Electronic Materials 3: 1700155. Available: http://dx.doi.org/10.1002/aelm.201700155.
Publisher:
Wiley-Blackwell
Journal:
Advanced Electronic Materials
Issue Date:
4-Aug-2017
DOI:
10.1002/aelm.201700155
Type:
Article
ISSN:
2199-160X
Sponsors:
Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors wish to thank core laboratory staff, especially M. N. Hedhili for their support. Figure 4 was produced by Heno Hwang, scientific illustrator at KAUST.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/aelm.201700155/full
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAlshammari, Fwzah H.en
dc.contributor.authorHota, Mrinal Kantien
dc.contributor.authorWang, Zhenweien
dc.contributor.authorAl-jawhari, Halaen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2017-10-03T12:49:36Z-
dc.date.available2017-10-03T12:49:36Z-
dc.date.issued2017-08-04en
dc.identifier.citationAlshammari FH, Hota MK, Wang Z, Al-jawhari Hala, Alshareef HN (2017) Atomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronics. Advanced Electronic Materials 3: 1700155. Available: http://dx.doi.org/10.1002/aelm.201700155.en
dc.identifier.issn2199-160Xen
dc.identifier.doi10.1002/aelm.201700155en
dc.identifier.urihttp://hdl.handle.net/10754/625720-
dc.description.abstractAtomic-layer-deposited SnO2 is used as a gate electrode to replace indium tin oxide (ITO) in thin-film transistors and circuits for the first time. The SnO2 films deposited at 200 °C show low electrical resistivity of ≈3.1 × 10−3 Ω cm with ≈93% transparency in most of the visible range of the electromagnetic spectrum. Thin-film transistors fabricated with SnO2 gates show excellent transistor properties including saturation mobility of 15.3 cm2 V−1 s−1, a low subthreshold swing of ≈130 mV dec−1, a high on/off ratio of ≈109, and an excellent electrical stability under constant-voltage stressing conditions to the gate terminal. Moreover, the SnO2-gated thin-film transistors show excellent electrical characteristics when used in electronic circuits such as negative channel metal oxide semiconductor (NMOS) inverters and ring oscillators. The NMOS inverters exhibit a low propagation stage delay of ≈150 ns with high DC voltage gain of ≈382. A high oscillation frequency of ≈303 kHz is obtained from the output sinusoidal signal of the 11-stage NMOS inverter-based ring oscillators. These results show that SnO2 can effectively replace ITO in transparent electronics and sensor applications.en
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). The authors wish to thank core laboratory staff, especially M. N. Hedhili for their support. Figure 4 was produced by Heno Hwang, scientific illustrator at KAUST.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/aelm.201700155/fullen
dc.subjectALD tin dioxidesen
dc.subjectNMOSen
dc.subjectRing oscillatorsen
dc.subjectThin film transistorsen
dc.subjectTransparent conducting oxidesen
dc.titleAtomic-Layer-Deposited SnO2 as Gate Electrode for Indium-Free Transparent Electronicsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalAdvanced Electronic Materialsen
kaust.authorAlshammari, Fwzah H.en
kaust.authorHota, Mrinal Kantien
kaust.authorWang, Zhenweien
kaust.authorAl-jawhari, Halaen
kaust.authorAlshareef, Husam N.en
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