Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

Handle URI:
http://hdl.handle.net/10754/625708
Title:
Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor
Authors:
Song, Zhibo; Schultz, Thorsten; Ding, Zijing; Lei, Bo; Han, Cheng; Amsalem, Patrick; Lin, Tingting; Chi, Dongzhi; Wong, Swee Liang; Zheng, Yu Jie; Li, Ming-yang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Chen, Wei; Koch, Norbert; Huang, Yu Li; Wee, Andrew Thye Shen
Abstract:
Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Song Z, Schultz T, Ding Z, Lei B, Han C, et al. (2017) Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor. ACS Nano 11: 9128–9135. Available: http://dx.doi.org/10.1021/acsnano.7b03953.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
28-Jul-2017
DOI:
10.1021/acsnano.7b03953
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
A.T.S.W. acknowledges financial support from MOE AcRF Tier 1 Grant Number R-144-000-321-112 and the Graphene Research Centre. Y.L.H. and D.C. acknowledge the A-STAR SERC grant support for the 2D growth project under the 2D pharos program (SERC 1527000012). Work in Berlin was supported by the DFG (SFB951 and AM419/1-1). Calculations were performed on the Graphene Research Centre cluster supported by Prof. Su Ying Quek.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953; http://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSong, Zhiboen
dc.contributor.authorSchultz, Thorstenen
dc.contributor.authorDing, Zijingen
dc.contributor.authorLei, Boen
dc.contributor.authorHan, Chengen
dc.contributor.authorAmsalem, Patricken
dc.contributor.authorLin, Tingtingen
dc.contributor.authorChi, Dongzhien
dc.contributor.authorWong, Swee Liangen
dc.contributor.authorZheng, Yu Jieen
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorChen, Weien
dc.contributor.authorKoch, Norberten
dc.contributor.authorHuang, Yu Lien
dc.contributor.authorWee, Andrew Thye Shenen
dc.date.accessioned2017-10-03T12:49:35Z-
dc.date.available2017-10-03T12:49:35Z-
dc.date.issued2017-07-28en
dc.identifier.citationSong Z, Schultz T, Ding Z, Lei B, Han C, et al. (2017) Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor. ACS Nano 11: 9128–9135. Available: http://dx.doi.org/10.1021/acsnano.7b03953.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.7b03953en
dc.identifier.urihttp://hdl.handle.net/10754/625708-
dc.description.abstractTwo-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe2), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe2. At the 1D border between the doped and undoped SL-WSe2 regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe2. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.en
dc.description.sponsorshipA.T.S.W. acknowledges financial support from MOE AcRF Tier 1 Grant Number R-144-000-321-112 and the Graphene Research Centre. Y.L.H. and D.C. acknowledge the A-STAR SERC grant support for the 2D growth project under the 2D pharos program (SERC 1527000012). Work in Berlin was supported by the DFG (SFB951 and AM419/1-1). Calculations were performed on the Graphene Research Centre cluster supported by Prof. Su Ying Quek.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.7b03953en
dc.subjectCharge transferen
dc.subjectPhotoemission Spectroscopyen
dc.subjectScanning Tunneling Microscopy/spectroscopyen
dc.subjectThomas−fermi Screeningen
dc.subjectLateral Intrinsic/p-doped Heterojunctionen
dc.subjectOrganic Tmd Heterostructureen
dc.titleElectronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductoren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.contributor.institutionInstitute of Materials Research & Engineering (IMRE), A*STAR (Agency for Science, Technology and Research) , 2 Fusionopolis Way, Innovis, Singapore 138634.en
dc.contributor.institutionInstitut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin , Brook-Taylor Straße 6, 12489 Berlin, Germany.en
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University , Shenzhen 518060, China.en
dc.contributor.institutionDepartment of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542.en
dc.contributor.institutionDepartment of Chemistry, National University of Singapore , 2 Science Drive 3, Singapore 117542.en
dc.contributor.institutionCentre for Advanced 2D Materials, National University of Singapore , Block S14, Level 6, 6 Science Drive 2, Singapore 117546.en
kaust.authorLi, Ming-yangen
kaust.authorLi, Lain-Jongen
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