Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

Handle URI:
http://hdl.handle.net/10754/625707
Title:
Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells
Authors:
Wijeyasinghe, Nilushi; Regoutz, Anna; Eisner, Flurin; Du, Tian; Tsetseris, Leonidas; Lin, Yen-Hung; Faber, Hendrik; Pattanasattayavong, Pichaya; Li, Jinhua; Yan, Feng; McLachlan, Martyn A.; Payne, David J.; Heeney, Martin; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division
Citation:
Wijeyasinghe N, Regoutz A, Eisner F, Du T, Tsetseris L, et al. (2017) Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells. Advanced Functional Materials 27: 1701818. Available: http://dx.doi.org/10.1002/adfm.201701818.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
28-Jul-2017
DOI:
10.1002/adfm.201701818
Type:
Article
ISSN:
1616-301X
Sponsors:
N.W., Y-H.L, H.F., and T.D.A. are grateful to the to the European Research Council (ERC) AMPRO grant number 280221, and the Engineering and Physical Sciences Research Council (EPSRC) grant number EP/L504786/1, for financial support. D.J.P. acknowledges support from the Royal Society (UF100105) and (UF150693). D.J.P. and A.R. acknowledge support from the EPSRC (EP/M013839/1 and EP/M028291/1). M.A.M. and T.D. are grateful for support through the EPSRC Centre for Doctoral Training in Plastic Electronics EP/L016702/1 and the Stephen and Anna Hui Scholarship (Imperial College London).
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201701818/abstract
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWijeyasinghe, Nilushien
dc.contributor.authorRegoutz, Annaen
dc.contributor.authorEisner, Flurinen
dc.contributor.authorDu, Tianen
dc.contributor.authorTsetseris, Leonidasen
dc.contributor.authorLin, Yen-Hungen
dc.contributor.authorFaber, Hendriken
dc.contributor.authorPattanasattayavong, Pichayaen
dc.contributor.authorLi, Jinhuaen
dc.contributor.authorYan, Fengen
dc.contributor.authorMcLachlan, Martyn A.en
dc.contributor.authorPayne, David J.en
dc.contributor.authorHeeney, Martinen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-10-03T12:49:35Z-
dc.date.available2017-10-03T12:49:35Z-
dc.date.issued2017-07-28en
dc.identifier.citationWijeyasinghe N, Regoutz A, Eisner F, Du T, Tsetseris L, et al. (2017) Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells. Advanced Functional Materials 27: 1701818. Available: http://dx.doi.org/10.1002/adfm.201701818.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201701818en
dc.identifier.urihttp://hdl.handle.net/10754/625707-
dc.description.abstractThis study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V−1 s−1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments.en
dc.description.sponsorshipN.W., Y-H.L, H.F., and T.D.A. are grateful to the to the European Research Council (ERC) AMPRO grant number 280221, and the Engineering and Physical Sciences Research Council (EPSRC) grant number EP/L504786/1, for financial support. D.J.P. acknowledges support from the Royal Society (UF100105) and (UF150693). D.J.P. and A.R. acknowledge support from the EPSRC (EP/M013839/1 and EP/M028291/1). M.A.M. and T.D. are grateful for support through the EPSRC Centre for Doctoral Training in Plastic Electronics EP/L016702/1 and the Stephen and Anna Hui Scholarship (Imperial College London).en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201701818/abstracten
dc.subjectCopper(I) thiocyanateen
dc.subjectHole-transport layersen
dc.subjectOrganic solar cellsen
dc.subjectPerovskite solar cellsen
dc.subjectTransparent semiconductors and transistorsen
dc.titleCopper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cellsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionDepartment of Physics and The Centre for Plastic Electronics; Imperial College London; London SW7 2AZ UKen
dc.contributor.institutionDepartment of Materials and The Centre for Plastic Electronics; Imperial College London; Royal School of Mines; London SW7 2AZ UKen
dc.contributor.institutionDepartment of Physics; National Technical University of Athens; Athens GR-15780 Greeceen
dc.contributor.institutionDepartment of Materials Science and Engineering; School of Molecular Science and Engineering; Vidyasirimedhi Institute of Science and Technology (VISTEC); Rayong 21210 Thailanden
dc.contributor.institutionDepartment of Applied Physics; The Hong Kong Polytechnic University; Hung Hom Kowloon Hong Kongen
dc.contributor.institutionDepartment of Chemistry and The Centre for Plastic Electronics; Imperial College London; London SW7 2AZ UKen
kaust.authorAnthopoulos, Thomas D.en
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