Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability

Handle URI:
http://hdl.handle.net/10754/625664
Title:
Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability
Authors:
Li, Henan; Li, Ying; Aljarb, Areej; Shi, Yumeng; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Recently there have been many research breakthroughs in two-dimensional (2D) materials including graphene, boron nitride (h-BN), black phosphors (BPs), and transition-metal dichalcogenides (TMDCs). The unique electrical, optical, and thermal properties in 2D materials are associated with their strictly defined low dimensionalities. These materials provide a wide range of basic building blocks for next-generation electronics. The chemical vapor deposition (CVD) technique has shown great promise to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches has also given rise to fascinating new physics, which could lead to exciting new applications. In this Review, we introduce the latest development of TMDC synthesis by CVD approaches and provide further insight for the controllable and reliable synthesis of atomically thin TMDCs. Understanding of the vapor-phase growth mechanism of 2D TMDCs could benefit the formation of complicated heterostructures and novel artificial 2D lattices.
KAUST Department:
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
Citation:
Li H, Li Y, Aljarb A, Shi Y, Li L-J (2017) Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability. Chemical Reviews. Available: http://dx.doi.org/10.1021/acs.chemrev.7b00212.
Publisher:
American Chemical Society (ACS)
Journal:
Chemical Reviews
Issue Date:
6-Jul-2017
DOI:
10.1021/acs.chemrev.7b00212
Type:
Article
ISSN:
0009-2665; 1520-6890
Sponsors:
This work was supported by National Natural Science Foundation of China (Grant no. 51602200), Educational Commission of Guangdong Province (Grant no. 2016KZDXM008), Natural Science Foundation of SZU (Grant no. 2017011), and King Abdullah University of Science and Technology, Saudi Arabia. This work was partially supported by the Science and Technology Planning Project of Guangdong Province (Grant no. 2016B050501005), the Educational Commission of Guangdong Province (Grant no. 2016KCXTD006), and Shenzhen Peacock Plan (Grant no. KQTD2016053112042971).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.chemrev.7b00212
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Henanen
dc.contributor.authorLi, Yingen
dc.contributor.authorAljarb, Areejen
dc.contributor.authorShi, Yumengen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2017-10-03T12:49:32Z-
dc.date.available2017-10-03T12:49:32Z-
dc.date.issued2017-07-06en
dc.identifier.citationLi H, Li Y, Aljarb A, Shi Y, Li L-J (2017) Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability. Chemical Reviews. Available: http://dx.doi.org/10.1021/acs.chemrev.7b00212.en
dc.identifier.issn0009-2665en
dc.identifier.issn1520-6890en
dc.identifier.doi10.1021/acs.chemrev.7b00212en
dc.identifier.urihttp://hdl.handle.net/10754/625664-
dc.description.abstractRecently there have been many research breakthroughs in two-dimensional (2D) materials including graphene, boron nitride (h-BN), black phosphors (BPs), and transition-metal dichalcogenides (TMDCs). The unique electrical, optical, and thermal properties in 2D materials are associated with their strictly defined low dimensionalities. These materials provide a wide range of basic building blocks for next-generation electronics. The chemical vapor deposition (CVD) technique has shown great promise to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches has also given rise to fascinating new physics, which could lead to exciting new applications. In this Review, we introduce the latest development of TMDC synthesis by CVD approaches and provide further insight for the controllable and reliable synthesis of atomically thin TMDCs. Understanding of the vapor-phase growth mechanism of 2D TMDCs could benefit the formation of complicated heterostructures and novel artificial 2D lattices.en
dc.description.sponsorshipThis work was supported by National Natural Science Foundation of China (Grant no. 51602200), Educational Commission of Guangdong Province (Grant no. 2016KZDXM008), Natural Science Foundation of SZU (Grant no. 2017011), and King Abdullah University of Science and Technology, Saudi Arabia. This work was partially supported by the Science and Technology Planning Project of Guangdong Province (Grant no. 2016B050501005), the Educational Commission of Guangdong Province (Grant no. 2016KCXTD006), and Shenzhen Peacock Plan (Grant no. KQTD2016053112042971).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.chemrev.7b00212en
dc.titleEpitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalabilityen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabiaen
dc.identifier.journalChemical Reviewsen
dc.contributor.institutionCollege of Electronic Science and Technology, Shenzhen University, Shenzhen 518060, Chinaen
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Chinaen
kaust.authorAljarb, Areejen
kaust.authorLi, Lain-Jongen
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