High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions

Handle URI:
http://hdl.handle.net/10754/625553
Title:
High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions
Authors:
Tsai, Meng-Lin; Li, Ming-yang; Shi, Yumeng; Chen, Lih-Juann; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
Electrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Physical Sciences and Engineering (PSE) Division
Citation:
Tsai M-L, Li M-Y, Shi Y, Chen L-J, Li L-J, et al. (2017) High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions. Nanoscale Horiz 2: 37–42. Available: http://dx.doi.org/10.1039/c6nh00075d.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Nanoscale Horiz.
Issue Date:
28-Oct-2016
DOI:
10.1039/c6nh00075d
Type:
Article
ISSN:
2055-6756; 2055-6764
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2017/NH/C6NH00075D#!divAbstract
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTsai, Meng-Linen
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorShi, Yumengen
dc.contributor.authorChen, Lih-Juannen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2017-10-03T12:49:25Z-
dc.date.available2017-10-03T12:49:25Z-
dc.date.issued2016-10-28en
dc.identifier.citationTsai M-L, Li M-Y, Shi Y, Chen L-J, Li L-J, et al. (2017) High-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctions. Nanoscale Horiz 2: 37–42. Available: http://dx.doi.org/10.1039/c6nh00075d.en
dc.identifier.issn2055-6756en
dc.identifier.issn2055-6764en
dc.identifier.doi10.1039/c6nh00075den
dc.identifier.urihttp://hdl.handle.net/10754/625553-
dc.description.abstractElectrical and optical properties of lateral monolayer WSe2–MoS2 p–n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W−1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/NH/C6NH00075D#!divAbstracten
dc.titleHigh-efficiency omnidirectional photoresponses based on monolayer lateral p–n heterojunctionsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNanoscale Horiz.en
dc.contributor.institutionDepartment of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Republic of Chinaen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, Republic of Chinaen
kaust.authorTsai, Meng-Linen
kaust.authorLi, Ming-yangen
kaust.authorShi, Yumengen
kaust.authorLi, Lain-Jongen
kaust.authorHe, Jr-Hauen
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