Controlling the emission wavelength in group III-V semiconductor laser diodes

Handle URI:
http://hdl.handle.net/10754/625545
Title:
Controlling the emission wavelength in group III-V semiconductor laser diodes
Authors:
Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Mohammed, Abdul Majid ( 0000-0003-2224-8982 ) ; Afandy, Rami; Aljabr, Ahmad
Assignee:
King Abdullah University Of Science And Technology
Abstract:
Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.
KAUST Department:
Computer, Electrical and Mathematical Science and Engineering
Issue Date:
29-Dec-2016
Submitted date:
2015-06-24
Type:
Patent
Patent Number:
US 9755403 B2
Application Number:
US 20160380409 A1
Patent Status:
Granted Patent
Additional Links:
http://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9755403; http://assignment.uspto.gov/#/search?adv=patNum:9755403; http://www.google.com/patents/US9755403B2; http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=9755403B2&KC=B2&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorMohammed, Abdul Majiden
dc.contributor.authorAfandy, Ramien
dc.contributor.authorAljabr, Ahmaden
dc.date.accessioned2017-10-03T08:16:45Z-
dc.date.available2017-10-03T08:16:45Z-
dc.date.issued2016-12-29-
dc.date.submitted2015-06-24-
dc.identifier.urihttp://hdl.handle.net/10754/625545-
dc.description.abstractMethods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.en
dc.relation.urlhttp://patft.uspto.gov/netacgi/nph-Parser?patentnumber=9755403en
dc.relation.urlhttp://assignment.uspto.gov/#/search?adv=patNum:9755403en
dc.relation.urlhttp://www.google.com/patents/US9755403B2en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=9755403B2&KC=B2&FT=Den
dc.titleControlling the emission wavelength in group III-V semiconductor laser diodesen
dc.typePatenten
dc.contributor.departmentComputer, Electrical and Mathematical Science and Engineeringen
dc.description.statusGranted Patenten
dc.contributor.assigneeKing Abdullah University Of Science And Technologyen
dc.description.countryUnited States of Americaen
dc.identifier.patentnumberUS 9755403 B2en
dc.identifier.applicationnumberUS 20160380409 A1en
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