Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction

Handle URI:
http://hdl.handle.net/10754/625530
Title:
Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction
Authors:
Sun, Haiding; Park, Young Jae; Li, Kuang-Hui; Torres Castanedo, C. G.; Alowayed, Abdulmohsen; Detchprohm, Theeradetch; Dupuis, Russell D. ( 0000-0003-4691-1208 ) ; Li, Xiaohang ( 0000-0002-4434-365X )
Abstract:
Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Electrical Engineering Program; King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal, 23955-6900, , Saudi Arabia
Citation:
Sun H, Park YJ, Li K-H, Torres Castanedo CG, Alowayed A, et al. (2017) Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction. Applied Physics Letters 111: 122106. Available: http://dx.doi.org/10.1063/1.4999249.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
21-Sep-2017
DOI:
10.1063/1.4999249
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
The KAUST authors would like to acknowledge the support of GCC Research Program No. REP/1/3189-01-01, Baseline No. BAS/1/1664-01-01, and Equipment No. BAS/1/1664-01-07. The work at Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4999249
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Haidingen
dc.contributor.authorPark, Young Jaeen
dc.contributor.authorLi, Kuang-Huien
dc.contributor.authorTorres Castanedo, C. G.en
dc.contributor.authorAlowayed, Abdulmohsenen
dc.contributor.authorDetchprohm, Theeradetchen
dc.contributor.authorDupuis, Russell D.en
dc.contributor.authorLi, Xiaohangen
dc.date.accessioned2017-10-02T10:53:15Z-
dc.date.available2017-10-02T10:53:15Z-
dc.date.issued2017-09-21en
dc.identifier.citationSun H, Park YJ, Li K-H, Torres Castanedo CG, Alowayed A, et al. (2017) Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction. Applied Physics Letters 111: 122106. Available: http://dx.doi.org/10.1063/1.4999249.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4999249en
dc.identifier.urihttp://hdl.handle.net/10754/625530-
dc.description.abstractOwing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a BAlN/AlGaN heterojunction grown by metalorganic vapor phase epitaxy. These specific compositions were chosen to ensure a sufficiently large band offset for deep ultraviolet and power electronic applications. High resolution transmission electron microscopy confirmed the high structural quality of the heterojunction with an abrupt interface and uniform element distribution. We employed high resolution X-ray photoemission spectroscopy to measure the core level binding energies of B 1s and Ga 2p with respect to the valence band maximum of BAlN and AlGaN layers, respectively. Then, we measured the energy separation between the B 1s and Ga 2p core levels at the interface of the heterojunction. The valence band offset was determined to be 0.40 ± 0.05 eV. As a consequence, we identified a staggered-gap (type-II) heterojunction with the conduction band offset of 1.10 ± 0.05 eV. The determination of the band alignment of the BAlN/AlGaN heterojunction facilitates the design of optical and electronic devices based on such junctions.en
dc.description.sponsorshipThe KAUST authors would like to acknowledge the support of GCC Research Program No. REP/1/3189-01-01, Baseline No. BAS/1/1664-01-01, and Equipment No. BAS/1/1664-01-07. The work at Georgia Institute of Technology was supported in part by DARPA under Grant No. W911NF-15-1-0026 and NSF under Grant No. DMR-1410874. R.D.D. acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4999249en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.4999249.en
dc.titleBand alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunctionen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal, 23955-6900, , Saudi Arabiaen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Compound Semiconductors, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, , , United Statesen
kaust.authorSun, Haidingen
kaust.authorLi, Kuang-Huien
kaust.authorTorres Castanedo, C. G.en
kaust.authorAlowayed, Abdulmohsenen
kaust.authorLi, Xiaohangen
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