Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2

Handle URI:
http://hdl.handle.net/10754/625508
Title:
Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2
Authors:
Tangi, Malleswara ( 0000-0003-1141-4324 ) ; Shakfa, Mohammad Khaled; Mishra, Pawan ( 0000-0001-9764-6016 ) ; Li, Ming-Yang; Chiu, Ming-Hui; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory; Physical Sciences and Engineering (PSE) Division
Citation:
Tangi M, Shakfa MK, Mishra P, Li M-Y, Chiu M-H, et al. (2017) Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2. Optical Materials Express 7: 3697. Available: http://dx.doi.org/10.1364/OME.7.003697.
Publisher:
The Optical Society
Journal:
Optical Materials Express
Issue Date:
22-Sep-2017
DOI:
10.1364/OME.7.003697
Type:
Article
ISSN:
2159-3930
Sponsors:
King Abdulaziz City for Science and Technology (KACST); King Abdullah University of Science and Technology (KAUST) (KACST TIC R2-FP-008 and BAS/1/1614-01-01).
Additional Links:
https://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-10-3697
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTangi, Malleswaraen
dc.contributor.authorShakfa, Mohammad Khaleden
dc.contributor.authorMishra, Pawanen
dc.contributor.authorLi, Ming-Yangen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-09-27T05:50:09Z-
dc.date.available2017-09-27T05:50:09Z-
dc.date.issued2017-09-22en
dc.identifier.citationTangi M, Shakfa MK, Mishra P, Li M-Y, Chiu M-H, et al. (2017) Anomalous photoluminescence thermal quenching of sandwiched single layer MoS_2. Optical Materials Express 7: 3697. Available: http://dx.doi.org/10.1364/OME.7.003697.en
dc.identifier.issn2159-3930en
dc.identifier.doi10.1364/OME.7.003697en
dc.identifier.urihttp://hdl.handle.net/10754/625508-
dc.description.abstractWe report an unusual thermal quenching of the micro-photoluminescence (µ-PL) intensity for a sandwiched single-layer (SL) MoS2. For this study, MoS2 layers were chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N lattice matched templates. Later, to accomplish air-stable sandwiched SL-MoS2, a thin In0.15Al0.85N cap layer was deposited on the MoS2/In0.15Al0.85N heterostructure. We confirm that the sandwiched MoS2 is a single layer from optical and structural analyses using µ-Raman spectroscopy and scanning transmission electron microscopy, respectively. By using high-resolution X-ray photoelectron spectroscopy, no structural phase transition of MoS2 is noticed. The recombination processes of bound and free excitons were analyzed by the power-dependent µ-PL studies at 77 K and room temperature (RT). The temperature-dependent micro photoluminescence (TDPL) measurements were carried out in the temperature range of 77 – 400 K. As temperature increases, a significant red-shift is observed for the free-exciton PL peak, revealing the delocalization of carriers. Further, we observe unconventional negative thermal quenching behavior, the enhancement of the µ-PL intensity with increasing temperatures up to 300K, which is explained by carrier hopping transitions that take place between shallow localized states to the band-edges. Thus, this study renders a fundamental insight into understanding the anomalous thermal quenching of µ-PL intensity of sandwiched SL-MoS2.en
dc.description.sponsorshipKing Abdulaziz City for Science and Technology (KACST); King Abdullah University of Science and Technology (KAUST) (KACST TIC R2-FP-008 and BAS/1/1614-01-01).en
dc.publisherThe Optical Societyen
dc.relation.urlhttps://www.osapublishing.org/ome/abstract.cfm?uri=ome-7-10-3697en
dc.rights© 2017 Optical Society of America]. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en
dc.titleAnomalous photoluminescence thermal quenching of sandwiched single layer MoS_2en
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalOptical Materials Expressen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwanen
kaust.authorTangi, Malleswaraen
kaust.authorShakfa, Mohammad Khaleden
kaust.authorMishra, Pawanen
kaust.authorChiu, Ming-Huien
kaust.authorNg, Tien Kheeen
kaust.authorLi, Lain-Jongen
kaust.authorOoi, Boon S.en
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