High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate

Handle URI:
http://hdl.handle.net/10754/625495
Title:
High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate
Authors:
Muhammed, Mufasila; Alwadai, Norah Mohammed Mosfer; Lopatin, Sergei; Kuramata, Akito; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
We demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Imaging and Characterization Core Lab
Citation:
Muhammed M, Alwadai N, Lopatin S, Kuramata A, Roqan IS (2017) High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b09584.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
11-Sep-2017
DOI:
10.1021/acsami.7b09584
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
The authors thank KAUST for the financial support.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsami.7b09584
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMuhammed, Mufasilaen
dc.contributor.authorAlwadai, Norah Mohammed Mosferen
dc.contributor.authorLopatin, Sergeien
dc.contributor.authorKuramata, Akitoen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2017-09-21T09:25:34Z-
dc.date.available2017-09-21T09:25:34Z-
dc.date.issued2017-09-11en
dc.identifier.citationMuhammed M, Alwadai N, Lopatin S, Kuramata A, Roqan IS (2017) High-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrate. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b09584.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.7b09584en
dc.identifier.urihttp://hdl.handle.net/10754/625495-
dc.description.abstractWe demonstrate a state-of-the-art high-efficiency GaN-based vertical light-emitting diode (VLED) grown on a transparent and conductive (-201)-oriented (β-Ga2O3) substrate, obtained using a straightforward growth process that does not require a high cost lift-off technique or complex fabrication process. The high-resolution scanning transmission electron microscopy (STEM) images confirm that we produced high quality upper layers, including a multi-quantum well (MQW) grown on the masked β-Ga2O3 substrate. STEM imaging also shows a well-defined MQW without InN diffusion into the barrier. Electroluminescence (EL) measurements at room temperature indicate that we achieved a very high internal quantum efficiency (IQE) of 78%; at lower temperatures, IQE reaches ~ 86%. The photoluminescence (PL) and time-resolved PL analysis indicate that, at a high carrier injection density, the emission is dominated by radiative recombination with a negligible Auger effect; no quantum-confined Stark effect is observed. At low temperatures, no efficiency droop is observed at a high carrier injection density, indicating the superior VLED structure obtained without lift-off processing, which is cost-effective for large-scale devices.en
dc.description.sponsorshipThe authors thank KAUST for the financial support.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b09584en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsami.7b09584.en
dc.titleHigh-Efficiency InGaN/GaN Quantum Well-Based Vertical Light-Emitting Diodes Fabricated on β-Ga2O3 Substrateen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalACS Applied Materials & Interfacesen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionTamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japanen
kaust.authorMuhammed, Mufasilaen
kaust.authorAlwadai, Norah Mohammed Mosferen
kaust.authorLopatin, Sergeien
kaust.authorRoqan, Iman S.en
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