Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Handle URI:
http://hdl.handle.net/10754/625476
Title:
Efficiency enhancement of InGaN amber MQWs using nanopillar structures
Authors:
Ou, Yiyu ( 0000-0002-2127-9827 ) ; Iida, Daisuke; Liu, Jin; Wu, Kaiyu; Ohkawa, Kazuhiro ( 0000-0002-8728-3503 ) ; Boisen, Anja; Petersen, Paul Michael; Ou, Haiyan
Abstract:
We have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.
KAUST Department:
Electrical Engineering Program
Citation:
Ou Y, Iida D, Liu J, Wu K, Ohkawa K, et al. (2017) Efficiency enhancement of InGaN amber MQWs using nanopillar structures. Nanophotonics 0. Available: http://dx.doi.org/10.1515/nanoph-2017-0057.
Publisher:
Walter de Gruyter GmbH
Journal:
Nanophotonics
Issue Date:
9-Sep-2017
DOI:
10.1515/nanoph-2017-0057
Type:
Article
ISSN:
2192-8614
Sponsors:
This work was supported by the Innovation Fund Denmark (project no. 4106-00018B). KW and AB acknowledge support from the Danish National Research Foundation and Villum Foundation’s Center for Intelligent Drug Delivery and Sensing Using Microcontainers and Nanomechanics (IDUN).
Additional Links:
https://www.degruyter.com/view/j/nanoph.ahead-of-print/nanoph-2017-0057/nanoph-2017-0057.xml
Appears in Collections:
Articles; Electrical Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorOu, Yiyuen
dc.contributor.authorIida, Daisukeen
dc.contributor.authorLiu, Jinen
dc.contributor.authorWu, Kaiyuen
dc.contributor.authorOhkawa, Kazuhiroen
dc.contributor.authorBoisen, Anjaen
dc.contributor.authorPetersen, Paul Michaelen
dc.contributor.authorOu, Haiyanen
dc.date.accessioned2017-09-20T06:02:14Z-
dc.date.available2017-09-20T06:02:14Z-
dc.date.issued2017-09-09en
dc.identifier.citationOu Y, Iida D, Liu J, Wu K, Ohkawa K, et al. (2017) Efficiency enhancement of InGaN amber MQWs using nanopillar structures. Nanophotonics 0. Available: http://dx.doi.org/10.1515/nanoph-2017-0057.en
dc.identifier.issn2192-8614en
dc.identifier.doi10.1515/nanoph-2017-0057en
dc.identifier.urihttp://hdl.handle.net/10754/625476-
dc.description.abstractWe have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.en
dc.description.sponsorshipThis work was supported by the Innovation Fund Denmark (project no. 4106-00018B). KW and AB acknowledge support from the Danish National Research Foundation and Villum Foundation’s Center for Intelligent Drug Delivery and Sensing Using Microcontainers and Nanomechanics (IDUN).en
dc.publisherWalter de Gruyter GmbHen
dc.relation.urlhttps://www.degruyter.com/view/j/nanoph.ahead-of-print/nanoph-2017-0057/nanoph-2017-0057.xmlen
dc.rightsThis work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0en
dc.subjectInGaN MQWsen
dc.subjectnanopillaren
dc.subjectQCSEen
dc.subjectstrain relaxationen
dc.subjectlight extractionen
dc.titleEfficiency enhancement of InGaN amber MQWs using nanopillar structuresen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalNanophotonicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDTU Fotonik, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Lyngby, Denmarken
dc.contributor.institutionSchool of Physics, Sun-Yat sen University, Guangzhou 510275, Chinaen
dc.contributor.institutionDTU Nanotech, Technical University of Denmark, DK-2800, Lyngby, Denmarken
kaust.authorIida, Daisukeen
kaust.authorOhkawa, Kazuhiroen
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