Hybrid mask for deep etching

Handle URI:
http://hdl.handle.net/10754/625440
Title:
Hybrid mask for deep etching
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 )
Assignee:
King Abdullah University Of Science And Technology
Abstract:
Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Issue Date:
10-Aug-2017
Submitted date:
2016-02-01
Type:
Patent
Application Number:
WO 2017134545 A1
Patent Status:
Published Application
Additional Links:
http://www.google.com/patents/WO2017134545A1; http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017134545A1&KC=A1&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.date.accessioned2017-09-11T07:08:58Z-
dc.date.available2017-09-11T07:08:58Z-
dc.date.issued2017-08-10-
dc.date.submitted2016-02-01-
dc.identifier.urihttp://hdl.handle.net/10754/625440-
dc.description.abstractDeep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.en
dc.relation.urlhttp://www.google.com/patents/WO2017134545A1en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017134545A1&KC=A1&FT=Den
dc.titleHybrid mask for deep etchingen
dc.typePatenten
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University Of Science And Technologyen
dc.description.countryWorld Intellectual Property Organization (WIPO)en
dc.identifier.applicationnumberWO 2017134545 A1en
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