Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well

Handle URI:
http://hdl.handle.net/10754/625432
Title:
Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well
Authors:
Tangi, Malleswarara ( 0000-0003-1141-4324 ) ; Mishra, Pawan ( 0000-0001-9764-6016 ) ; Li, Ming-Yang; Shakfa, Mohammad Khaled; Anjum, Dalaver H.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory; Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division
Citation:
Tangi M, Mishra P, Li M-Y, Shakfa MK, Anjum DH, et al. (2017) Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well. Applied Physics Letters 111: 092104. Available: http://dx.doi.org/10.1063/1.4995976.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
31-Aug-2017
DOI:
10.1063/1.4995976
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4995976
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorTangi, Malleswararaen
dc.contributor.authorMishra, Pawanen
dc.contributor.authorLi, Ming-Yangen
dc.contributor.authorShakfa, Mohammad Khaleden
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-09-11T08:34:38Z-
dc.date.available2017-09-10T09:33:10Z-
dc.date.available2017-09-11T08:34:38Z-
dc.date.issued2017-08-31-
dc.identifier.citationTangi M, Mishra P, Li M-Y, Shakfa MK, Anjum DH, et al. (2017) Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well. Applied Physics Letters 111: 092104. Available: http://dx.doi.org/10.1063/1.4995976.en
dc.identifier.issn0003-6951-
dc.identifier.issn1077-3118-
dc.identifier.doi10.1063/1.4995976-
dc.identifier.urihttp://hdl.handle.net/10754/625432-
dc.description.abstractThe valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices. In this report, to study the band alignment parameters at the In0.15Al0.85N/MoS2 lattice matched heterointerface, large area MoS2 single layers are chemical vapor deposited on molecular beam epitaxial grown In0.15Al0.85N films and vice versa. We grew InAlN having an in-plane lattice parameter closely matching with that of MoS2. We confirm that the grown MoS2 is a single layer from optical and structural analyses using micro-Raman spectroscopy and scanning transmission electron microscopy. The band offset parameters VBO and CBO at the In0.15Al0.85N/MoS2 heterojunction are determined to be 2.08 ± 0.15 and 0.60 ± 0.15 eV, respectively, with type-I band alignment using high-resolution x-ray photoelectron spectroscopy in conjunction with ultraviolet photoelectron spectroscopy. Furthermore, we design a MoS2 quantum well structure by growing an In0.15Al0.85N layer on MoS2/In0.15Al0.85N type-I heterostructure. By reducing the nitrogen plasma power and flow rate for the overgrown In0.15Al0.85N layers, we achieve unaltered structural properties and a reasonable preservation of photoluminescence intensity with a peak width of 70 meV for MoS2 quantum well (QW). The investigation provides a pathway towards realizing large area, air-stable, lattice matched, and eventual high efficiency In0.15Al0.85N/MoS2/In0.15Al0.85N QW-based light emitting devices.en
dc.description.sponsorshipWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008, and baseline funding BAS/1/1614-01-01 of the King Abdullah University of Science and Technology (KAUST).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4995976en
dc.rightsAll article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.titleType-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum wellen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei 10617, Taiwanen
kaust.authorTangi, Malleswararaoen
kaust.authorMishra, Pawanen
kaust.authorShakfa, Mohammad Khaleden
kaust.authorAnjum, Dalaver H.en
kaust.authorHedhili, Mohamed N.en
kaust.authorNg, Tien Kheeen
kaust.authorLi, Lain-Jongen
kaust.authorOoi, Boon S.en

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