Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes

Handle URI:
http://hdl.handle.net/10754/625427
Title:
Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes
Authors:
Zhou, Yu; Wu, Di; Zhu, Yihan; Cho, Yujin; He, Qing; Yang, Xiao; Herrera, Kevin; Chu, Zhaodong; Han, Yu ( 0000-0003-1462-1118 ) ; Downer, Mike; Peng, Hailin; Lai, Keji
Abstract:
Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Zhou Y, Wu D, Zhu Y, Cho Y, He Q, et al. (2017) Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes. Nano Letters. Available: http://dx.doi.org/10.1021/acs.nanolett.7b02198.
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
25-Aug-2017
DOI:
10.1021/acs.nanolett.7b02198
Type:
Article
ISSN:
1530-6984; 1530-6992
Sponsors:
The PFM work is supported by the Welch Foundation Grant F-1814. D.W. and Z.C. also acknowledges the support from NSF EFRI under Award # EFMA-1542747. The SHG work (Y. C. and M. C. D.) is supported by Welch Grant F-1038. The sample synthesis and device fabrication work are supported by the National Basic Research Program of China (No. 2014CB932500) and the National Natural Science Foundation of China (No. 21525310).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b02198
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhou, Yuen
dc.contributor.authorWu, Dien
dc.contributor.authorZhu, Yihanen
dc.contributor.authorCho, Yujinen
dc.contributor.authorHe, Qingen
dc.contributor.authorYang, Xiaoen
dc.contributor.authorHerrera, Kevinen
dc.contributor.authorChu, Zhaodongen
dc.contributor.authorHan, Yuen
dc.contributor.authorDowner, Mikeen
dc.contributor.authorPeng, Hailinen
dc.contributor.authorLai, Kejien
dc.date.accessioned2017-08-30T11:40:26Z-
dc.date.available2017-08-30T11:40:26Z-
dc.date.issued2017-08-25en
dc.identifier.citationZhou Y, Wu D, Zhu Y, Cho Y, He Q, et al. (2017) Out-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakes. Nano Letters. Available: http://dx.doi.org/10.1021/acs.nanolett.7b02198.en
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/acs.nanolett.7b02198en
dc.identifier.urihttp://hdl.handle.net/10754/625427-
dc.description.abstractPiezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we report the first experimental evidence of out-of-plane piezoelectricity and ferroelectricity in van der Waals layered α-In2Se3 nano-flakes. The non-centrosymmetric R3m symmetry of the α-In2Se3 samples is confirmed by scanning transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements. Domains with opposite polarizations are visualized by piezo-response force microscopy. Single-point poling experiments suggest that the polarization is potentially switchable for α-In2Se3 nano-flakes with thicknesses down to ~ 10 nm. The piezotronic effect is demonstrated in two-terminal devices, where the Schottky barrier can be modulated by the strain-induced piezopotential. Our work on polar α-In2Se3, one of the model 2D piezoelectrics and ferroelectrics with simple crystal structures, shows its great potential in electronic and photonic applications.en
dc.description.sponsorshipThe PFM work is supported by the Welch Foundation Grant F-1814. D.W. and Z.C. also acknowledges the support from NSF EFRI under Award # EFMA-1542747. The SHG work (Y. C. and M. C. D.) is supported by Welch Grant F-1038. The sample synthesis and device fabrication work are supported by the National Basic Research Program of China (No. 2014CB932500) and the National Natural Science Foundation of China (No. 21525310).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b02198en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.7b02198.en
dc.subjectIn2Se3en
dc.subject2D materialsen
dc.subjectpiezoelectricen
dc.subjectferroelectricen
dc.subjectpolarizationen
dc.titleOut-of-plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nano-flakesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.eprint.versionPost-printen
dc.contributor.institutionCollege of Chemistry and Molecular Engineering, Peking University, Beijing 100871, Chinaen
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin TX 78712, USAen
dc.contributor.institutionDepartment of Physics, Durham University, Durham DH1 3LE, United Kingdomen
kaust.authorZhu, Yihanen
kaust.authorHan, Yuen
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