Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition Metal Dichalcogenides

Handle URI:
http://hdl.handle.net/10754/625349
Title:
Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition Metal Dichalcogenides
Authors:
Aljarb, Areej; Cao, Zhen; Tang, Hao-Ling; Huang, Jing-Kai; Li, Mengliu; Hu, Weijin ( 0000-0001-5862-1481 ) ; Cavallo, Luigi ( 0000-0002-1398-338X ) ; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Two-dimensional (2D) transition metal dichalcogenide (TMDCs) semiconductors are important for next-generation electronics and optoelectronics. Given the difficulty in growing large single crystals of 2D TMDC materials, understanding the factors affecting the seed formation and orientation becomes an important issue for controlling the growth. Here, we systematically study the growth of molybdenum disulfide (MoS2) monolayer on c-plane sapphire with chemical vapor deposition (CVD) to discover the factors controlling their orientation. We show that the concentration of precursors, i.e., the ratio between sulfur and molybdenum oxide (MoO3), plays a key role in the size and orientation of seeds, subsequently controlling the orientation of MoS2 monolayers. High S/MoO3 ratio is needed in the early stage of growth to form small seeds that can align easily to the substrate lattice structures while the ratio should be decreased to enlarge the size of the monolayer at the next stage of the lateral growth. Moreover, we show that the seeds are actually crystalline MoS2 layers as revealed by high-resolution transmission electron microscopy. There exist two preferred orientations (0° or 60°) registered on sapphire, confirmed by our density functional theory (DFT) simulation. This report offers a facile technique to grow highly aligned 2D TMDCs and contributes to knowledge advancement in growth mechanism.
KAUST Department:
KAUST Catalysis Center (KCC); Physical Sciences and Engineering (PSE) Division
Citation:
Aljarb A, Cao Z, Tang H-L, Huang J-K, Li M, et al. (2017) Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition Metal Dichalcogenides. ACS Nano. Available: http://dx.doi.org/10.1021/acsnano.7b04323.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
7-Aug-2017
DOI:
10.1021/acsnano.7b04323
Type:
Article
ISSN:
1936-0851; 1936-086X
Sponsors:
All authors acknowledge support from King Abdullah University of Science and Technology (KAUST) under Competitive Research Grant (#CRG4-2634) and KAUST Catalyst Center, Saudi Arabia. The simulations were performed on the Shaheen II supercomputer.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsnano.7b04323
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; KAUST Catalysis Center (KCC)

Full metadata record

DC FieldValue Language
dc.contributor.authorAljarb, Areejen
dc.contributor.authorCao, Zhenen
dc.contributor.authorTang, Hao-Lingen
dc.contributor.authorHuang, Jing-Kaien
dc.contributor.authorLi, Mengliuen
dc.contributor.authorHu, Weijinen
dc.contributor.authorCavallo, Luigien
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2017-08-14T06:41:39Z-
dc.date.available2017-08-14T06:41:39Z-
dc.date.issued2017-08-07en
dc.identifier.citationAljarb A, Cao Z, Tang H-L, Huang J-K, Li M, et al. (2017) Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition Metal Dichalcogenides. ACS Nano. Available: http://dx.doi.org/10.1021/acsnano.7b04323.en
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.7b04323en
dc.identifier.urihttp://hdl.handle.net/10754/625349-
dc.description.abstractTwo-dimensional (2D) transition metal dichalcogenide (TMDCs) semiconductors are important for next-generation electronics and optoelectronics. Given the difficulty in growing large single crystals of 2D TMDC materials, understanding the factors affecting the seed formation and orientation becomes an important issue for controlling the growth. Here, we systematically study the growth of molybdenum disulfide (MoS2) monolayer on c-plane sapphire with chemical vapor deposition (CVD) to discover the factors controlling their orientation. We show that the concentration of precursors, i.e., the ratio between sulfur and molybdenum oxide (MoO3), plays a key role in the size and orientation of seeds, subsequently controlling the orientation of MoS2 monolayers. High S/MoO3 ratio is needed in the early stage of growth to form small seeds that can align easily to the substrate lattice structures while the ratio should be decreased to enlarge the size of the monolayer at the next stage of the lateral growth. Moreover, we show that the seeds are actually crystalline MoS2 layers as revealed by high-resolution transmission electron microscopy. There exist two preferred orientations (0° or 60°) registered on sapphire, confirmed by our density functional theory (DFT) simulation. This report offers a facile technique to grow highly aligned 2D TMDCs and contributes to knowledge advancement in growth mechanism.en
dc.description.sponsorshipAll authors acknowledge support from King Abdullah University of Science and Technology (KAUST) under Competitive Research Grant (#CRG4-2634) and KAUST Catalyst Center, Saudi Arabia. The simulations were performed on the Shaheen II supercomputer.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.7b04323en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.7b04323.en
dc.subjectTwo-dimensional materialsen
dc.subjectMolybdenum disulfide (MoS2)en
dc.subjectTransition metal dichalcogenidesen
dc.subjectChemical vapor depositionen
dc.subjectSeedsen
dc.subjectAligned growthen
dc.titleSubstrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition Metal Dichalcogenidesen
dc.typeArticleen
dc.contributor.departmentKAUST Catalysis Center (KCC)en
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.eprint.versionPost-printen
kaust.authorAljarb, Areejen
kaust.authorCao, Zhenen
kaust.authorTang, Hao-Lingen
kaust.authorHuang, Jing-Kaien
kaust.authorLi, Mengliuen
kaust.authorHu, Weijinen
kaust.authorCavallo, Luigien
kaust.authorLi, Lain-Jongen
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