Defect Structure of Localized Excitons in a WSe2 Monolayer

Handle URI:
http://hdl.handle.net/10754/625331
Title:
Defect Structure of Localized Excitons in a WSe2 Monolayer
Authors:
Zhang, Shuai; Wang, Chen-Guang; Li, Ming-yang; Huang, Di; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Ji, Wei; Wu, Shiwei
Abstract:
The atomic and electronic structure of intrinsic defects in a WSe2 monolayer grown on graphite was revealed by low temperature scanning tunneling microscopy and spectroscopy. Instead of chalcogen vacancies that prevail in other transition metal dichalcogenide materials, intrinsic defects in WSe2 arise surprisingly from single tungsten vacancies, leading to the hole (p-type) doping. Furthermore, we found these defects to dominate the excitonic emission of the WSe2 monolayer at low temperature. Our work provided the first atomic-scale understanding of defect excitons and paved the way toward deciphering the defect structure of single quantum emitters previously discovered in the WSe2 monolayer.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Zhang S, Wang C-G, Li M-Y, Huang D, Li L-J, et al. (2017) Defect Structure of Localized Excitons in a WSe2 Monolayer. Physical Review Letters 119. Available: http://dx.doi.org/10.1103/PhysRevLett.119.046101.
Publisher:
American Physical Society (APS)
Journal:
Physical Review Letters
Issue Date:
26-Jul-2017
DOI:
10.1103/PhysRevLett.119.046101
Type:
Article
ISSN:
0031-9007; 1079-7114
Sponsors:
The work at Fudan was supported by the National Basic Research Program of China (No. 2014CB921601 and No. 2016YFA0301002), the National Natural Science Foundation of China (No. 91421108 and No. 11427902), and the Science and Technology Commission of Shanghai Municipality (16JC1400401). C.-G.W. and W.J. acknowledge support from the National Natural Science Foundation of China (NSFC) under Grants No. 61674171, No. 11274380, No. 91433103, and No. 11622437, the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China under Grant No. 16XNLQ01. C.-G.W. was supported by the Outstanding Innovative Talents Cultivation Funded Programs of Renmin University of China. The calculations were performed at the Physics Laboratory for High-Performance Computing of Renmin University of China and at the Shanghai Supercomputer Center. L. J. L. acknowledges the support from King Abdullah University of Science and Technology and Academia Sinica Taiwan.
Additional Links:
https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.119.046101
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Shuaien
dc.contributor.authorWang, Chen-Guangen
dc.contributor.authorLi, Ming-yangen
dc.contributor.authorHuang, Dien
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorJi, Weien
dc.contributor.authorWu, Shiweien
dc.date.accessioned2017-08-14T06:41:37Z-
dc.date.available2017-08-14T06:41:37Z-
dc.date.issued2017-07-26en
dc.identifier.citationZhang S, Wang C-G, Li M-Y, Huang D, Li L-J, et al. (2017) Defect Structure of Localized Excitons in a WSe2 Monolayer. Physical Review Letters 119. Available: http://dx.doi.org/10.1103/PhysRevLett.119.046101.en
dc.identifier.issn0031-9007en
dc.identifier.issn1079-7114en
dc.identifier.doi10.1103/PhysRevLett.119.046101en
dc.identifier.urihttp://hdl.handle.net/10754/625331-
dc.description.abstractThe atomic and electronic structure of intrinsic defects in a WSe2 monolayer grown on graphite was revealed by low temperature scanning tunneling microscopy and spectroscopy. Instead of chalcogen vacancies that prevail in other transition metal dichalcogenide materials, intrinsic defects in WSe2 arise surprisingly from single tungsten vacancies, leading to the hole (p-type) doping. Furthermore, we found these defects to dominate the excitonic emission of the WSe2 monolayer at low temperature. Our work provided the first atomic-scale understanding of defect excitons and paved the way toward deciphering the defect structure of single quantum emitters previously discovered in the WSe2 monolayer.en
dc.description.sponsorshipThe work at Fudan was supported by the National Basic Research Program of China (No. 2014CB921601 and No. 2016YFA0301002), the National Natural Science Foundation of China (No. 91421108 and No. 11427902), and the Science and Technology Commission of Shanghai Municipality (16JC1400401). C.-G.W. and W.J. acknowledge support from the National Natural Science Foundation of China (NSFC) under Grants No. 61674171, No. 11274380, No. 91433103, and No. 11622437, the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China under Grant No. 16XNLQ01. C.-G.W. was supported by the Outstanding Innovative Talents Cultivation Funded Programs of Renmin University of China. The calculations were performed at the Physics Laboratory for High-Performance Computing of Renmin University of China and at the Shanghai Supercomputer Center. L. J. L. acknowledges the support from King Abdullah University of Science and Technology and Academia Sinica Taiwan.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttps://journals.aps.org/prl/abstract/10.1103/PhysRevLett.119.046101en
dc.rightsArchived with thanks to Physical Review Lettersen
dc.titleDefect Structure of Localized Excitons in a WSe2 Monolayeren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionState Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, Fudan University, Shanghai, 200433, , Chinaen
dc.contributor.institutionDepartment of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing, 100872, , Chinaen
dc.contributor.institutionResearch Center for Applied Sciences, Academia Sinica, Taipei, 10617, , , Taiwanen
dc.contributor.institutionCollaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, , Chinaen
kaust.authorLi, Ming-yangen
kaust.authorLi, Lain-Jongen
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