Organic tunnel field effect transistors

Handle URI:
http://hdl.handle.net/10754/625327
Title:
Organic tunnel field effect transistors
Authors:
Tietze, Max Lutz; Lussem, Bjorn; Liu, Shiyi
Assignee:
King Abdullah University Of Science And Technology
Abstract:
Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Issue Date:
29-Jun-2017
Submitted date:
2015-12-22
Type:
Patent
Application Number:
WO 2017109734 A1
Patent Status:
Published Application
Additional Links:
http://www.google.com/patents/WO2017109734A1; http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017109734A1&KC=A1&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorTietze, Max Lutzen
dc.contributor.authorLussem, Bjornen
dc.contributor.authorLiu, Shiyien
dc.date.accessioned2017-08-13T08:09:49Z-
dc.date.available2017-08-13T08:09:49Z-
dc.date.issued2017-06-29-
dc.date.submitted2015-12-22-
dc.identifier.urihttp://hdl.handle.net/10754/625327-
dc.description.abstractVarious examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.en
dc.relation.urlhttp://www.google.com/patents/WO2017109734A1en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017109734A1&KC=A1&FT=Den
dc.titleOrganic tunnel field effect transistorsen
dc.typePatenten
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University Of Science And Technologyen
dc.description.countryWorld Intellectual Property Organization (WIPO)en
dc.identifier.applicationnumberWO 2017109734 A1en
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