Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics

Handle URI:
http://hdl.handle.net/10754/625298
Title:
Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics
Authors:
Kirmani, Ahmad R.; Garcia de Arquer, F. Pelayo; Fan, James Z.; Khan, Jafar Iqbal; Walters, Grant; Hoogland, Sjoerd; Wehbe, Nimer; Said, Marcel M.; Barlow, Stephen; Laquai, Frederic ( 0000-0002-5887-6158 ) ; Marder, Seth R.; Sargent, Edward H.; Amassian, Aram ( 0000-0002-5734-1194 )
Abstract:
Employment of thin perovskite shells and metal halides as surface-passivants for colloidal quantum dots (CQDs) have been important, recent developments in CQD optoelectronics. These have opened the route to single-step deposited high-performing CQD solar cells. These promising architectures employ a QD hole-transporting layer (HTL) whose intrinsically shallow Fermi level (EF) restricts band-bending at maximum power-point during solar cell operation limiting charge collection. Here, we demonstrate a generalized approach to effectively balance band-edge energy levels of the main CQD absorber and charge-transport layer for these high-performance solar cells. Briefly soaking the QD HTL in a solution of the metal-organic p-dopant, molybdenum tris(1-(trifluoroacetyl)-2-(trifluoromethyl)ethane-1,2-dithiolene), effectively deepens its Fermi level, resulting in enhanced band bending at the HTL:absorber junction. This blocks the back-flow of photo-generated electrons, leading to enhanced photocurrent and fill factor compared to undoped devices. We demonstrate 9.0% perovskite-shelled and 9.5% metal-halide-passivated CQD solar cells, both achieving ca. 10% relative enhancements over undoped baselines.
KAUST Department:
KAUST Solar Center (KSC); Physical Sciences and Engineering (PSE) Division
Citation:
Kirmani AR, Garcia de Arquer FP, Fan JZ, Khan JI, Walters G, et al. (2017) Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics. ACS Energy Letters. Available: http://dx.doi.org/10.1021/acsenergylett.7b00540.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Energy Letters
Issue Date:
31-Jul-2017
DOI:
10.1021/acsenergylett.7b00540
Type:
Article
ISSN:
2380-8195; 2380-8195
Sponsors:
The authors thank Yadong Zhang (Georgia Institute of Technology) for the chemical synthesis of the metal-organic complex, Mo(tfd-COCF3)3, used in this study. F.P.G.A., J. Z. F., G. W., S. H., and E. H. S. thank the Award KUS-11-009-21 from King Abdullah University of Science and Technology (KAUST), the Ontario Research Fund - Research Excellence Program, and the Natural Sciences and Engineering Research Council of Canada (NSERC). M. M. S., S.B., and S. R. M. thank the Office of Naval Research for support through (N00014-14-1-0126). F.P.G.A. acknowledges financial support from the Connaught Fund.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsenergylett.7b00540
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorKirmani, Ahmad R.en
dc.contributor.authorGarcia de Arquer, F. Pelayoen
dc.contributor.authorFan, James Z.en
dc.contributor.authorKhan, Jafar Iqbalen
dc.contributor.authorWalters, Granten
dc.contributor.authorHoogland, Sjoerden
dc.contributor.authorWehbe, Nimeren
dc.contributor.authorSaid, Marcel M.en
dc.contributor.authorBarlow, Stephenen
dc.contributor.authorLaquai, Fredericen
dc.contributor.authorMarder, Seth R.en
dc.contributor.authorSargent, Edward H.en
dc.contributor.authorAmassian, Aramen
dc.date.accessioned2017-08-07T10:52:00Z-
dc.date.available2017-08-07T10:52:00Z-
dc.date.issued2017-07-31en
dc.identifier.citationKirmani AR, Garcia de Arquer FP, Fan JZ, Khan JI, Walters G, et al. (2017) Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaics. ACS Energy Letters. Available: http://dx.doi.org/10.1021/acsenergylett.7b00540.en
dc.identifier.issn2380-8195en
dc.identifier.issn2380-8195en
dc.identifier.doi10.1021/acsenergylett.7b00540en
dc.identifier.urihttp://hdl.handle.net/10754/625298-
dc.description.abstractEmployment of thin perovskite shells and metal halides as surface-passivants for colloidal quantum dots (CQDs) have been important, recent developments in CQD optoelectronics. These have opened the route to single-step deposited high-performing CQD solar cells. These promising architectures employ a QD hole-transporting layer (HTL) whose intrinsically shallow Fermi level (EF) restricts band-bending at maximum power-point during solar cell operation limiting charge collection. Here, we demonstrate a generalized approach to effectively balance band-edge energy levels of the main CQD absorber and charge-transport layer for these high-performance solar cells. Briefly soaking the QD HTL in a solution of the metal-organic p-dopant, molybdenum tris(1-(trifluoroacetyl)-2-(trifluoromethyl)ethane-1,2-dithiolene), effectively deepens its Fermi level, resulting in enhanced band bending at the HTL:absorber junction. This blocks the back-flow of photo-generated electrons, leading to enhanced photocurrent and fill factor compared to undoped devices. We demonstrate 9.0% perovskite-shelled and 9.5% metal-halide-passivated CQD solar cells, both achieving ca. 10% relative enhancements over undoped baselines.en
dc.description.sponsorshipThe authors thank Yadong Zhang (Georgia Institute of Technology) for the chemical synthesis of the metal-organic complex, Mo(tfd-COCF3)3, used in this study. F.P.G.A., J. Z. F., G. W., S. H., and E. H. S. thank the Award KUS-11-009-21 from King Abdullah University of Science and Technology (KAUST), the Ontario Research Fund - Research Excellence Program, and the Natural Sciences and Engineering Research Council of Canada (NSERC). M. M. S., S.B., and S. R. M. thank the Office of Naval Research for support through (N00014-14-1-0126). F.P.G.A. acknowledges financial support from the Connaught Fund.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsenergylett.7b00540en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Energy Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsenergylett.7b00540.en
dc.titleMolecular Doping of the Hole-Transporting Layer for Efficient, Single-Step Deposited Colloidal Quantum Dot Photovoltaicsen
dc.typeArticleen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Energy Lettersen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada.en
dc.contributor.institutionSchool of Chemistry and Biochemistry and Center for Organic Photonics and Electronics, Georgia Institute of Technology, 901 Atlantic Drive, Atlanta, GA, 30332-0400, United Statesen
kaust.authorKirmani, Ahmad R.en
kaust.authorKhan, Jafar Iqbalen
kaust.authorWehbe, Nimeren
kaust.authorLaquai, Fredericen
kaust.authorAmassian, Aramen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.