Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature

Handle URI:
http://hdl.handle.net/10754/625288
Title:
Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature
Authors:
Stavarache, Ionel ( 0000-0002-6405-9912 ) ; Maraloiu, Valentin Adrian; Negrila, Catalin; Prepelita, Petronela; Gruia, Ion; Iordache, Gheorghe
Abstract:
Lowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO<sub>2</sub> thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO<sub>2</sub> by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO<sub>2</sub> photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 10<sup>14</sup> Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO<sub>2</sub> thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.
KAUST Department:
Advanced Nanofabrication and Thin Film Core Lab
Citation:
Stavarache I, Maraloiu VA, Negrila C, Prepelita P, Gruia I, et al. (2017) Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature. Semiconductor Science and Technology. Available: http://dx.doi.org/10.1088/1361-6641/aa8154.
Publisher:
IOP Publishing
Journal:
Semiconductor Science and Technology
Issue Date:
21-Jul-2017
DOI:
10.1088/1361-6641/aa8154
Type:
Article
ISSN:
0268-1242; 1361-6641
Sponsors:
This work was supported by the Romanian National Authority for Scientific Research through the Core Program, Project PN09-450101 and CNCS-UEFISCDI Contracts PNII-PT-PCCA-9/2012, PNII-ID/289-2011 and M-ERA.NET Project number 33/2016.
Additional Links:
http://iopscience.iop.org/article/10.1088/1361-6641/aa8154
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorStavarache, Ionelen
dc.contributor.authorMaraloiu, Valentin Adrianen
dc.contributor.authorNegrila, Catalinen
dc.contributor.authorPrepelita, Petronelaen
dc.contributor.authorGruia, Ionen
dc.contributor.authorIordache, Gheorgheen
dc.date.accessioned2017-08-03T11:56:25Z-
dc.date.available2017-08-03T11:56:25Z-
dc.date.issued2017-07-21en
dc.identifier.citationStavarache I, Maraloiu VA, Negrila C, Prepelita P, Gruia I, et al. (2017) Photo-sensitive Ge nanocrystal based films controlled by substrate deposition temperature. Semiconductor Science and Technology. Available: http://dx.doi.org/10.1088/1361-6641/aa8154.en
dc.identifier.issn0268-1242en
dc.identifier.issn1361-6641en
dc.identifier.doi10.1088/1361-6641/aa8154en
dc.identifier.urihttp://hdl.handle.net/10754/625288-
dc.description.abstractLowering the temperature of crystallization by deposition of thin films on a heated substrate represents the easiest way to find new means to develop and improve new working devices based on nanocrystals embedded in thin films. The improvements are strongly related with the increasing of operation speed, substantially decreasing the energy consumption and reducing unit fabrication costs of the respective semiconductor devices. This approach avoids major problems, such as those related to diffusion or difficulties in controlling of nanocrystallites size, which appear during thermal treatments at high temperatures after deposition. It is reported here the significant progress introduced by synthesis procedure to the in-situ structuring of Ge nanocrystallites in SiO<sub>2</sub> thin films by heating the substrate at low temperature, 400 °C during co-deposition of Ge and SiO<sub>2</sub> by magnetron sputtering. As a proof-of-concept, a Si/Ge-NCs:SiO<sub>2</sub> photo-sensitive structure was fabricated thereof and characterized. The structure shows superior performance on broad operation bandwidth from visible to near-infrared, as strong rectification properties in dark, significant current rise in the inversion mode when illuminated, high responsivity, high photo-detectivity of 10<sup>14</sup> Jones, quick response and significant conversion efficiency of 850 %. This simple preparation approach brings an important contribution to the efort of structuring Ge nanocrystallites in SiO<sub>2</sub> thin films at a lower temperature for the purpose of using these materials for devices in optoelectronics, solar cells and electronics on flexible substrates.en
dc.description.sponsorshipThis work was supported by the Romanian National Authority for Scientific Research through the Core Program, Project PN09-450101 and CNCS-UEFISCDI Contracts PNII-PT-PCCA-9/2012, PNII-ID/289-2011 and M-ERA.NET Project number 33/2016.en
dc.publisherIOP Publishingen
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/1361-6641/aa8154en
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://doi.org/10.1088/1361-6641/aa8154. As the Version of Record of this article is going to be/has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.en
dc.subjectgermanium nanocrystallitesen
dc.subjectelectrical propertiesen
dc.subjectphotocurrenten
dc.subjectresponsivityen
dc.subjectresponse timeen
dc.titlePhoto-sensitive Ge nanocrystal based films controlled by substrate deposition temperatureen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.identifier.journalSemiconductor Science and Technologyen
dc.eprint.versionPost-printen
dc.contributor.institutionInstitutul National de Cercetare-Dezvoltare pentru Fizica, 405A Atomistilor Street, Magurele, Ilfov, 077125, ROMANIAen
dc.contributor.institutionNational Institute of Materials Physics, Magurele, Ilfov, ROMANIAen
dc.contributor.institutionNational Institute of Materials Physics, Magurele , Ilfov, ROMANIAen
dc.contributor.institutionNational Institute for Laser, Plasma and Radiation Physics, Magurele, ROMANIAen
dc.contributor.institutionUniversity of Bucharest, Faculty of Physics, Magurele, ROMANIAen
kaust.authorIordache, Gheorgheen
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