Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission

Handle URI:
http://hdl.handle.net/10754/625250
Title:
Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission
Authors:
Mula, Guido ( 0000-0001-9364-6107 ) ; Printemps, Tony; Licitra, Christophe; Sogne, Elisa ( 0000-0003-2097-4358 ) ; D’Acapito, Francesco; Gambacorti, Narciso; Sestu, Nicola; Saba, Michele; Pinna, Elisa; Chiriu, Daniele ( 0000-0003-2097-1229 ) ; Ricci, Pier Carlo ( 0000-0001-6191-4613 ) ; Casu, Alberto; Quochi, Francesco; Mura, Andrea; Bongiovanni, Giovanni; Falqui, Andrea ( 0000-0002-1476-7742 )
Abstract:
Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.
KAUST Department:
Biological and Environmental Sciences and Engineering (BESE) Division
Citation:
Mula G, Printemps T, Licitra C, Sogne E, D’Acapito F, et al. (2017) Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission. Scientific Reports 7. Available: http://dx.doi.org/10.1038/s41598-017-06567-4.
Publisher:
Springer Nature
Journal:
Scientific Reports
Issue Date:
14-Jul-2017
DOI:
10.1038/s41598-017-06567-4
Type:
Article
ISSN:
2045-2322
Sponsors:
The authors acknowledge financial support from the KAUST baseline and start-up of Prof. Andrea Falqui and funding access to the nanocharacterization platform (PFNC) at the Minatec Campus in Grenoble and ESRF for support with the MA-2539 experiment.
Additional Links:
https://www.nature.com/articles/s41598-017-06567-4
Appears in Collections:
Articles; Biological and Environmental Sciences and Engineering (BESE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMula, Guidoen
dc.contributor.authorPrintemps, Tonyen
dc.contributor.authorLicitra, Christopheen
dc.contributor.authorSogne, Elisaen
dc.contributor.authorD’Acapito, Francescoen
dc.contributor.authorGambacorti, Narcisoen
dc.contributor.authorSestu, Nicolaen
dc.contributor.authorSaba, Micheleen
dc.contributor.authorPinna, Elisaen
dc.contributor.authorChiriu, Danieleen
dc.contributor.authorRicci, Pier Carloen
dc.contributor.authorCasu, Albertoen
dc.contributor.authorQuochi, Francescoen
dc.contributor.authorMura, Andreaen
dc.contributor.authorBongiovanni, Giovannien
dc.contributor.authorFalqui, Andreaen
dc.date.accessioned2017-07-26T06:19:09Z-
dc.date.available2017-07-26T06:19:09Z-
dc.date.issued2017-07-14en
dc.identifier.citationMula G, Printemps T, Licitra C, Sogne E, D’Acapito F, et al. (2017) Doping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emission. Scientific Reports 7. Available: http://dx.doi.org/10.1038/s41598-017-06567-4.en
dc.identifier.issn2045-2322en
dc.identifier.doi10.1038/s41598-017-06567-4en
dc.identifier.urihttp://hdl.handle.net/10754/625250-
dc.description.abstractEr clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For porous Si, the long-standing failure to govern the clustering has been attributed to insufficient knowledge of the several, concomitant and complex processes occurring during the electrochemical Er-doping. We propose here an alternative road to solve the issue: instead of looking for an equilibrium between Er content and light emission using 1-2% Er, we propose to significantly increase the electrochemical doping level to reach the filling the porous silicon pores with luminescent Er-rich material. To better understand the intricate and superposing phenomena of this process, we exploit an original approach based on needle electron tomography, EXAFS and photoluminescence. Needle electron tomography surprisingly shows a heterogeneous distribution of Er content in the silicon thin pores that until now couldn't be revealed by the sole use of scanning electron microscopy compositional mapping. Besides, while showing that pore filling leads to enhanced photoluminescence emission, we demonstrate that the latter is originated from both erbium oxide and silicate. These results give a much deeper understanding of the photoluminescence origin down to nanoscale and could lead to novel approaches focused on noteworthy enhancement of Er-related photoluminescence in porous silicon.en
dc.description.sponsorshipThe authors acknowledge financial support from the KAUST baseline and start-up of Prof. Andrea Falqui and funding access to the nanocharacterization platform (PFNC) at the Minatec Campus in Grenoble and ESRF for support with the MA-2539 experiment.en
dc.publisherSpringer Natureen
dc.relation.urlhttps://www.nature.com/articles/s41598-017-06567-4en
dc.rightsThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleDoping porous silicon with erbium: pores filling as a method to limit the Er-clustering effects and increasing its light emissionen
dc.typeArticleen
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Divisionen
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCNR-IOM - Istituto Officina dei Materiali c/o Laboratorio Materiali Porosi, Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8, km 0.700, 09042, Monserrato (Ca), Italy.en
dc.contributor.institutionDipartimento di Fisica, Cittadella Universitaria di Monserrato, Università degli Studi di Cagliari, S.P. 8 km 0.700, 09042, Monserrato (Ca), Italy.en
dc.contributor.institutionCEA, LETI, MINATEC Campus, F-38054, Grenoble, France.en
dc.contributor.institutionUniversité Grenoble Alpes, F-38000, Grenoble, France.en
dc.contributor.institutionCNR-IOM-OGG c/o ESRF, LISA CRG, 71 Av. des Martyrs, F-38043, Grenoble, France.en
kaust.authorSogne, Elisaen
kaust.authorCasu, Albertoen
kaust.authorFalqui, Andreaen
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