Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow

Handle URI:
http://hdl.handle.net/10754/625247
Title:
Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow
Authors:
Wang, Shuo; Li, Xiaohang ( 0000-0002-4434-365X ) ; Fischer, Alec M.; Detchprohm, Theeradetch; Dupuis, Russell D.; Ponce, Fernando A.
Abstract:
We have investigated the microstructure of BxAl1-xN films grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09. On the other hand, boron content deduced from the aluminum signal in the Rutherford backscattering spectra (RBS) ranges x = 0.06 to 0.16, closely following gas-flow ratios. Transmission electron microscopy indicates the sole presence of wurtzite crystal structure in the BAlN films, and a tendency towards columnar growth for B/(B+Al) gas-flow ratios below 0.12. For higher ratios, the BAlN films exhibit a tendency towards twin formation and finer microstructure. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films.The RBS data suggest that the incorporation of B is highly efficient for our growth method, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%, for the range of B/(B+Al) gas-flow ratios that we used, which is significantly higher than previously thought.
KAUST Department:
King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabia
Citation:
Wang S, Li X, Fischer AM, Detchprohm T, Dupuis RD, et al. (2017) Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow. Journal of Crystal Growth. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.07.013.
Publisher:
Elsevier BV
Journal:
Journal of Crystal Growth
Issue Date:
20-Jul-2017
DOI:
10.1016/j.jcrysgro.2017.07.013
Type:
Article
ISSN:
0022-0248
Sponsors:
This work was supported by the U.S. National Science Foundation under DMR-1410874. XHL acknowledges support of the KAUST startup and baseline funding. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. The authors acknowledge beneficial discussion of RBS data with Daniel Tseng from Evans Analytical Group, and Dr. Barry Wilkens from Arizona State University. The authors acknowledge the help in EELS from Jing Lu and Dr. Ray Carpenter from Arizona State University.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S002202481730458X
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Shuoen
dc.contributor.authorLi, Xiaohangen
dc.contributor.authorFischer, Alec M.en
dc.contributor.authorDetchprohm, Theeradetchen
dc.contributor.authorDupuis, Russell D.en
dc.contributor.authorPonce, Fernando A.en
dc.date.accessioned2017-07-26T06:19:09Z-
dc.date.available2017-07-26T06:19:09Z-
dc.date.issued2017-07-20en
dc.identifier.citationWang S, Li X, Fischer AM, Detchprohm T, Dupuis RD, et al. (2017) Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow. Journal of Crystal Growth. Available: http://dx.doi.org/10.1016/j.jcrysgro.2017.07.013.en
dc.identifier.issn0022-0248en
dc.identifier.doi10.1016/j.jcrysgro.2017.07.013en
dc.identifier.urihttp://hdl.handle.net/10754/625247-
dc.description.abstractWe have investigated the microstructure of BxAl1-xN films grown by flow-modulated epitaxy at 1010 oC, with B/(B+Al) gas-flow ratios ranging from 0.06 to 0.18. The boron content obtained from X-ray diffraction (XRD) patterns ranges from x = 0.02 to 0.09. On the other hand, boron content deduced from the aluminum signal in the Rutherford backscattering spectra (RBS) ranges x = 0.06 to 0.16, closely following gas-flow ratios. Transmission electron microscopy indicates the sole presence of wurtzite crystal structure in the BAlN films, and a tendency towards columnar growth for B/(B+Al) gas-flow ratios below 0.12. For higher ratios, the BAlN films exhibit a tendency towards twin formation and finer microstructure. Electron energy loss spectroscopy has been used to profile spatial variations in the composition of the films.The RBS data suggest that the incorporation of B is highly efficient for our growth method, while the XRD data indicate that the epitaxial growth may be limited by a solubility limit in the crystal phase at about 9%, for the range of B/(B+Al) gas-flow ratios that we used, which is significantly higher than previously thought.en
dc.description.sponsorshipThis work was supported by the U.S. National Science Foundation under DMR-1410874. XHL acknowledges support of the KAUST startup and baseline funding. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. The authors acknowledge beneficial discussion of RBS data with Daniel Tseng from Evans Analytical Group, and Dr. Barry Wilkens from Arizona State University. The authors acknowledge the help in EELS from Jing Lu and Dr. Ray Carpenter from Arizona State University.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S002202481730458Xen
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, [, , (2017-07-20)] DOI: 10.1016/j.jcrysgro.2017.07.013 . © 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectA1. Characterizationen
dc.subjectA1. Crystal structureen
dc.subjectA3. Metalorganic chemical vapor depositionen
dc.subjectB1. Nitridesen
dc.subjectB2. Semiconducting III-V materialsen
dc.titleCrystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flowen
dc.typeArticleen
dc.contributor.departmentKing Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955-6900, Saudi Arabiaen
dc.identifier.journalJournal of Crystal Growthen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Physics, Arizona State University, Tempe, Arizona 85287-1504, USAen
dc.contributor.institutionCenter for Compound Semiconductors and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USAen
kaust.authorLi, Xiaohangen
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