Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures

Handle URI:
http://hdl.handle.net/10754/625242
Title:
Magnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structures
Authors:
Velazquez-Rizo, Martin ( 0000-0003-2896-754X )
Abstract:
In this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed magnet (Bhowmik et al., 2014). The possibility of setting the magnetization to both stable magnetization states in a controlled manner using a similar concept remains unknown, but the proposed structure poses to be a solution to this difficulty. The second cell proposed takes advantage of the multiple stable magnetic states that exist in ferromagnets with configurational anisotropy and also uses spin torques to manipulate its magnetization. It utilizes a square-shaped ferromagnet whose stable magnetization has preferred directions along the diagonals of the square, giving four stable magnetic states allowing to use the structure as a multi-bit memory cell. Both devices use spin currents generated in heavy metals by the Spin Hall effect present in these materials. Among the advantages of the structures proposed are their inherent non-volatility and the fact that there is no need for applying external magnetic fields during their operation, which drastically improves the energy efficiency of the devices. Computational simulations using the Object Oriented Micromagnetic Framework (OOMMF) software package were performed to study the dynamics of the magnetization process in both structures and predict their behavior. Besides, we fabricated a 4-terminal memory cell with configurational anisotropy similar to the device proposed, and found four stable resistive states on the structure, proving the feasibility of this technology for implementation of high-density, non-volatile memory cells.
Advisors:
Fariborzi, Hossein ( 0000-0002-7828-0239 )
Committee Member:
Ohkawa, Kazuhiro; Manchon, Aurelien ( 0000-0002-4768-293X )
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Program:
Electrical Engineering
Issue Date:
Jul-2017
Type:
Thesis
Appears in Collections:
Theses

Full metadata record

DC FieldValue Language
dc.contributor.advisorFariborzi, Hosseinen
dc.contributor.authorVelazquez-Rizo, Martinen
dc.date.accessioned2017-07-26T01:49:52Z-
dc.date.available2017-07-26T01:49:52Z-
dc.date.issued2017-07-
dc.identifier.urihttp://hdl.handle.net/10754/625242-
dc.description.abstractIn this work, two new spintronic memory cell structures are proposed. The first cell uses the diffusion of polarized spins into ferromagnets with perpendicular anisotropy to tilt their magnetization followed by their dipolar coupling to a fixed magnet (Bhowmik et al., 2014). The possibility of setting the magnetization to both stable magnetization states in a controlled manner using a similar concept remains unknown, but the proposed structure poses to be a solution to this difficulty. The second cell proposed takes advantage of the multiple stable magnetic states that exist in ferromagnets with configurational anisotropy and also uses spin torques to manipulate its magnetization. It utilizes a square-shaped ferromagnet whose stable magnetization has preferred directions along the diagonals of the square, giving four stable magnetic states allowing to use the structure as a multi-bit memory cell. Both devices use spin currents generated in heavy metals by the Spin Hall effect present in these materials. Among the advantages of the structures proposed are their inherent non-volatility and the fact that there is no need for applying external magnetic fields during their operation, which drastically improves the energy efficiency of the devices. Computational simulations using the Object Oriented Micromagnetic Framework (OOMMF) software package were performed to study the dynamics of the magnetization process in both structures and predict their behavior. Besides, we fabricated a 4-terminal memory cell with configurational anisotropy similar to the device proposed, and found four stable resistive states on the structure, proving the feasibility of this technology for implementation of high-density, non-volatile memory cells.en
dc.language.isoenen
dc.subjectSpintronicsen
dc.subjectMemory cellen
dc.subjectNon-volatileen
dc.subjectSpinhall effecten
dc.subjectMagnetismen
dc.subjectCurrent drivenen
dc.titleMagnetization Dynamics in Two Novel Current-Driven Spintronic Memory Cell Structuresen
dc.typeThesisen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
thesis.degree.grantorKing Abdullah University of Science and Technologyen
dc.contributor.committeememberOhkawa, Kazuhiroen
dc.contributor.committeememberManchon, Aurelienen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.nameMaster of Scienceen
dc.person.id142772en
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