Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors

Handle URI:
http://hdl.handle.net/10754/625239
Title:
Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors
Authors:
Chen, Hu ( 0000-0001-5597-2964 ) ; Hurhangee, Michael; Nikolka, Mark; Zhang, Weimin; Kirkus, Mindaugas ( 0000-0002-8959-9085 ) ; Neophytou, Marios; Cryer, Samuel J.; Harkin, David; Hayoz, Pascal; Abdi-Jalebi, Mojtaba; McNeill, Christopher R.; Sirringhaus, Henning; McCulloch, Iain ( 0000-0002-6340-7217 )
Abstract:
The charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.
KAUST Department:
Kaust Solar Center (KSC)
Publisher:
Wiley-VCH Verlag
Journal:
Advanced Materials
Issue Date:
19-Jul-2017
DOI:
10.1002/adma.201702523
Type:
Article
Sponsors:
The authors thank KAUST and BASF for financial support and acknowledge EC FP7 Project SC2 (610115) EC H2020 Project SOLEDLIGHT (643791), and EPSRC Projects EP/G037515/1 and EP/M005143/1. M.N. and H.S. acknowledge financial support from the Engineering and Physical Sciences Research Council through a Programme Grant (EP/M005141/1). M.A.J. gratefully acknowledges Nava Technology Limited for a Ph.D. scholarship. The authors also thank Mr. James Fraser for the help of synthesizing several intermediates and Dr. Aditya Sadhanala for help with PDS measurements. C.R.M. also acknowledges support from the Australian Research Council (DP130102616). This research was undertaken in part on the SAXS/ WAXS beamline[26] at the Australian Synchrotron, Victoria, Australia.
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Full metadata record

DC FieldValue Language
dc.contributor.authorChen, Huen
dc.contributor.authorHurhangee, Michaelen
dc.contributor.authorNikolka, Marken
dc.contributor.authorZhang, Weiminen
dc.contributor.authorKirkus, Mindaugasen
dc.contributor.authorNeophytou, Mariosen
dc.contributor.authorCryer, Samuel J.en
dc.contributor.authorHarkin, Daviden
dc.contributor.authorHayoz, Pascalen
dc.contributor.authorAbdi-Jalebi, Mojtabaen
dc.contributor.authorMcNeill, Christopher R.en
dc.contributor.authorSirringhaus, Henningen
dc.contributor.authorMcCulloch, Iainen
dc.date.accessioned2017-07-19T10:58:57Z-
dc.date.available2017-07-19T10:58:57Z-
dc.date.issued2017-07-19-
dc.identifier.doi10.1002/adma.201702523-
dc.identifier.urihttp://hdl.handle.net/10754/625239-
dc.description.abstractThe charge-carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene (IDT) repeat unit, which have both a low Urbach energy and a high mobility in thin-film-transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin-film morphology evaluated, with the co-benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm2 V−1 s−1 in bottom-gate top-contact organic field-effect transistors.en
dc.description.sponsorshipThe authors thank KAUST and BASF for financial support and acknowledge EC FP7 Project SC2 (610115) EC H2020 Project SOLEDLIGHT (643791), and EPSRC Projects EP/G037515/1 and EP/M005143/1. M.N. and H.S. acknowledge financial support from the Engineering and Physical Sciences Research Council through a Programme Grant (EP/M005141/1). M.A.J. gratefully acknowledges Nava Technology Limited for a Ph.D. scholarship. The authors also thank Mr. James Fraser for the help of synthesizing several intermediates and Dr. Aditya Sadhanala for help with PDS measurements. C.R.M. also acknowledges support from the Australian Research Council (DP130102616). This research was undertaken in part on the SAXS/ WAXS beamline[26] at the Australian Synchrotron, Victoria, Australia.en
dc.language.isoenen
dc.publisherWiley-VCH Verlagen
dc.rightsThis is the peer reviewed version of the following article: Dithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistors, which has been published in final form at http://doi.org/10.1002/adma.201702523. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.en
dc.titleDithiopheneindenofluorene (TIF) Semiconducting Polymers with Very High Mobility in Field-Effect Transistorsen
dc.typeArticleen
dc.contributor.departmentKaust Solar Center (KSC)en
dc.identifier.journalAdvanced Materialsen
dc.eprint.versionPost-printen
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic Electronics, Imperial College Londonen
dc.contributor.institutionOptoelectronics Group, Cavendish Laboratory, University of Cambridgeen
dc.contributor.institutionBASF Schweiz AG, RAV/BE, Mattenstrasse, Basel 4058, Switzerlanden
dc.contributor.institutionDepartment of Materials Science and Engineering, Monash University, Victoria 3800, Australiaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
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