Influence of disorder on transfer characteristics of organic electrochemical transistors

Handle URI:
http://hdl.handle.net/10754/625222
Title:
Influence of disorder on transfer characteristics of organic electrochemical transistors
Authors:
Friedlein, Jacob T. ( 0000-0001-8330-1412 ) ; Rivnay, Jonathan; Dunlap, David H.; McCulloch, Iain ( 0000-0002-6340-7217 ) ; Shaheen, Sean E. ( 0000-0002-7179-9230 ) ; McLeod, Robert R.; Malliaras, George G. ( 0000-0002-4582-8501 )
Abstract:
Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.
KAUST Department:
KAUST Solar Center (KSC)
Citation:
Friedlein JT, Rivnay J, Dunlap DH, McCulloch I, Shaheen SE, et al. (2017) Influence of disorder on transfer characteristics of organic electrochemical transistors. Applied Physics Letters 111: 023301. Available: http://dx.doi.org/10.1063/1.4993776.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
13-Jul-2017
DOI:
10.1063/1.4993776
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
J.T.F. acknowledges support from the Graduate Assistantships in Areas of National Need Award No. P200A120063 and the NSF GRFP Award No. DGE 1144083. S.E.S. acknowledges support from the National Science Foundation Grant No. DMR-1006930. R.R.M. acknowledges support from the National Science Foundation Grant CAREER (No. ECCS 0847390). R.R.M. and S.E.S. acknowledge support from the National Science Foundation Grant No. ECCS 1509909.
Additional Links:
http://aip.scitation.org/doi/10.1063/1.4993776
Appears in Collections:
Articles; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorFriedlein, Jacob T.en
dc.contributor.authorRivnay, Jonathanen
dc.contributor.authorDunlap, David H.en
dc.contributor.authorMcCulloch, Iainen
dc.contributor.authorShaheen, Sean E.en
dc.contributor.authorMcLeod, Robert R.en
dc.contributor.authorMalliaras, George G.en
dc.date.accessioned2017-07-19T10:45:01Z-
dc.date.available2017-07-19T10:45:01Z-
dc.date.issued2017-07-13en
dc.identifier.citationFriedlein JT, Rivnay J, Dunlap DH, McCulloch I, Shaheen SE, et al. (2017) Influence of disorder on transfer characteristics of organic electrochemical transistors. Applied Physics Letters 111: 023301. Available: http://dx.doi.org/10.1063/1.4993776.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4993776en
dc.identifier.urihttp://hdl.handle.net/10754/625222-
dc.description.abstractOrganic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.en
dc.description.sponsorshipJ.T.F. acknowledges support from the Graduate Assistantships in Areas of National Need Award No. P200A120063 and the NSF GRFP Award No. DGE 1144083. S.E.S. acknowledges support from the National Science Foundation Grant No. DMR-1006930. R.R.M. acknowledges support from the National Science Foundation Grant CAREER (No. ECCS 0847390). R.R.M. and S.E.S. acknowledge support from the National Science Foundation Grant No. ECCS 1509909.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://aip.scitation.org/doi/10.1063/1.4993776en
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://doi.org/10.1063/1.4993776.en
dc.titleInfluence of disorder on transfer characteristics of organic electrochemical transistorsen
dc.typeArticleen
dc.contributor.departmentKAUST Solar Center (KSC)en
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical, Computer, and Energy Engineering, University of Colorado, 425 UCB, Boulder, Colorado 80309, USAen
dc.contributor.institutionDepartment of Biomedical Engineering, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208-3109, USAen
dc.contributor.institutionDepartment of Physics and Astronomy, University of New Mexico, 1919 Lomas Blvd. NE, Albuquerque, New Mexico 87131, USAen
dc.contributor.institutionDepartment of Chemistry and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Physics, University of Colorado, 390 UCB, Boulder, Colorado 80309, USAen
dc.contributor.institutionDepartment of Bioelectronics, Ecole Nationale Supérieure des Mines CMP‐EMSE MOC Gardanne 13541, Franceen
kaust.authorMcCulloch, Iainen
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