Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example

Handle URI:
http://hdl.handle.net/10754/625161
Title:
Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example
Authors:
Ho, Chih-Hsiang; Tsai, Dung-Sheng; Lu, Chao; Kim, Soo Youn; Mungan, Selin; Yang, Shih-Guo; Zhang, Yuanzhi; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
The effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Ho C-H, Tsai D-S, Lu C, Kim SY, Mungan S, et al. (2017) Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example. IEEE Electron Device Letters: 1–1. Available: http://dx.doi.org/10.1109/LED.2017.2720186.
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Electron Device Letters
Issue Date:
27-Jun-2017
DOI:
10.1109/LED.2017.2720186
Type:
Article
ISSN:
0741-3106; 1558-0563
Additional Links:
http://ieeexplore.ieee.org/document/7959154/
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHo, Chih-Hsiangen
dc.contributor.authorTsai, Dung-Shengen
dc.contributor.authorLu, Chaoen
dc.contributor.authorKim, Soo Younen
dc.contributor.authorMungan, Selinen
dc.contributor.authorYang, Shih-Guoen
dc.contributor.authorZhang, Yuanzhien
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2017-07-06T09:43:05Z-
dc.date.available2017-07-06T09:43:05Z-
dc.date.issued2017-06-27en
dc.identifier.citationHo C-H, Tsai D-S, Lu C, Kim SY, Mungan S, et al. (2017) Device Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Example. IEEE Electron Device Letters: 1–1. Available: http://dx.doi.org/10.1109/LED.2017.2720186.en
dc.identifier.issn0741-3106en
dc.identifier.issn1558-0563en
dc.identifier.doi10.1109/LED.2017.2720186en
dc.identifier.urihttp://hdl.handle.net/10754/625161-
dc.description.abstractThe effects of Hf content on the radiation hardness of Hf-In-Zn-O thin-film transistors (HIZO TFTs) and HIZO TFTbased circuits are systemically examined. The evaluated circuits, including current-starved ring oscillator, energy harvesting and RF circuits are essential for space electronic systems. It is shown that HIZO TFTs with low Hf concentration have better initial performance while TFTs with high Hf concentration are more stable against radiation. On the other hand, for circuit application, the stable HIZO TFTs are not necessarily preferred for all circuits. The work demonstrates that understanding the device-circuit interactions is necessary for device optimization and circuit reliability improvements for harsh electronic systems.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/document/7959154/en
dc.rights(c) 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectCircuit stabilityen
dc.subjectHafniumen
dc.subjectProtonsen
dc.subjectRadiation effectsen
dc.subjectRadio frequencyen
dc.subjectSputteringen
dc.subjectThin film transistorsen
dc.titleDevice Process and Circuit Application Interaction for Harsh Electronics: Hf-In-Zn-O Thin Film Transistors as an Exampleen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Electron Device Lettersen
dc.eprint.versionPost-printen
dc.contributor.institutionPurdue University, West Lafayette, IN, 47907-6130, USA.en
dc.contributor.institutionInstitute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan.en
dc.contributor.institutionDepartment of ECE, Southern Illinois University, Carbondale, IL, 62901, USA.en
dc.contributor.institutionDepartment of Semiconductor Science, Dongguk University, Seoul 04620, South Korea.en
kaust.authorHe, Jr-Hauen
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