Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

Handle URI:
http://hdl.handle.net/10754/625118
Title:
Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications
Authors:
Young, N.G.; Farrell, R.M.; Iza, M.; Nakamura, S.; DenBaars, S.P.; Weisbuch, C.; Speck, J.S.
Abstract:
We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.
Citation:
Young NG, Farrell RM, Iza M, Nakamura S, DenBaars SP, et al. (2016) Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications. Journal of Crystal Growth 455: 105–110. Available: http://dx.doi.org/10.1016/j.jcrysgro.2016.09.074.
Publisher:
Elsevier BV
Journal:
Journal of Crystal Growth
Issue Date:
1-Oct-2016
DOI:
10.1016/j.jcrysgro.2016.09.074
Type:
Article
ISSN:
0022-0248
Sponsors:
This work was supported by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC Program (DMR-1121053). The sapphire substrates, freestanding GaN substrates, and the IBGe metalorganic source used for this study were provided by Namiki Precision Jewel, Furukawa Denshi Co., Ltd., and Dow Chemical Co., respectively.
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorYoung, N.G.en
dc.contributor.authorFarrell, R.M.en
dc.contributor.authorIza, M.en
dc.contributor.authorNakamura, S.en
dc.contributor.authorDenBaars, S.P.en
dc.contributor.authorWeisbuch, C.en
dc.contributor.authorSpeck, J.S.en
dc.date.accessioned2017-06-21T06:51:52Z-
dc.date.available2017-06-21T06:51:52Z-
dc.date.issued2016-10-01en
dc.identifier.citationYoung NG, Farrell RM, Iza M, Nakamura S, DenBaars SP, et al. (2016) Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications. Journal of Crystal Growth 455: 105–110. Available: http://dx.doi.org/10.1016/j.jcrysgro.2016.09.074.en
dc.identifier.issn0022-0248en
dc.identifier.doi10.1016/j.jcrysgro.2016.09.074en
dc.identifier.urihttp://hdl.handle.net/10754/625118-
dc.description.abstractWe demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.en
dc.description.sponsorshipThis work was supported by the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). Additional support was provided by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC Program (DMR-1121053). The sapphire substrates, freestanding GaN substrates, and the IBGe metalorganic source used for this study were provided by Namiki Precision Jewel, Furukawa Denshi Co., Ltd., and Dow Chemical Co., respectively.en
dc.publisherElsevier BVen
dc.subjectA1. Atomic Force Microscopyen
dc.subjectA1. Crystal Morphologyen
dc.subjectA1. Dopingen
dc.subjectA3. Metalorganic chemical vapor depositionen
dc.subjectB1. Nitridesen
dc.titleGermanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applicationsen
dc.typeArticleen
dc.identifier.journalJournal of Crystal Growthen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA, 93106, , United Statesen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, , United Statesen
dc.contributor.institutionLaboratoire de Physique de la Matière Condensée, CNRS-Ecole Polytechnique, Palaiseau Cedex, 91128, , , Franceen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.