Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

Handle URI:
http://hdl.handle.net/10754/625079
Title:
Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy
Authors:
Soltani, S.; Bouzidi, M.; Chine, Z.; Toure, A.; Halidou, I.; El Jani, B.; Shakfa, M. K.
Abstract:
The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Photonics Laboratory
Citation:
Soltani S, Bouzidi M, Chine Z, Touré A, Halidou I, et al. (2017) Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy. Thin Solid Films 630: 2–6. Available: http://dx.doi.org/10.1016/j.tsf.2017.02.039.
Publisher:
Elsevier BV
Journal:
Thin Solid Films
Issue Date:
17-Feb-2017
DOI:
10.1016/j.tsf.2017.02.039
Type:
Article
ISSN:
0040-6090
Sponsors:
Financial support from the Tunisian General Directorate of Scientific and Technical Research (DGRST) is gratefully acknowledged. The authors would like to thank Prof. Dr. Martin Koch of the Physics Department of the Philipp University of Marburg for giving the opportunity to perform the time-resolved photoluminescence measurements in his laboratories.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S0040609017301281
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSoltani, S.en
dc.contributor.authorBouzidi, M.en
dc.contributor.authorChine, Z.en
dc.contributor.authorToure, A.en
dc.contributor.authorHalidou, I.en
dc.contributor.authorEl Jani, B.en
dc.contributor.authorShakfa, M. K.en
dc.date.accessioned2017-06-21T06:42:07Z-
dc.date.available2017-06-21T06:42:07Z-
dc.date.issued2017-02-17en
dc.identifier.citationSoltani S, Bouzidi M, Chine Z, Touré A, Halidou I, et al. (2017) Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy. Thin Solid Films 630: 2–6. Available: http://dx.doi.org/10.1016/j.tsf.2017.02.039.en
dc.identifier.issn0040-6090en
dc.identifier.doi10.1016/j.tsf.2017.02.039en
dc.identifier.urihttp://hdl.handle.net/10754/625079-
dc.description.abstractThe effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.en
dc.description.sponsorshipFinancial support from the Tunisian General Directorate of Scientific and Technical Research (DGRST) is gratefully acknowledged. The authors would like to thank Prof. Dr. Martin Koch of the Physics Department of the Philipp University of Marburg for giving the opportunity to perform the time-resolved photoluminescence measurements in his laboratories.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S0040609017301281en
dc.subjectAluminum gallium nitrideen
dc.subjectMetal organic chemical vapor depositionen
dc.subjectPhotoreflectance spectroscopyen
dc.subjectTime-resolved photoluminescenceen
dc.titleEffect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxyen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalThin Solid Filmsen
dc.contributor.institutionUnité de Recherche sur les Hétéro-Epitaxies et Applications (URHEA), Faculté des Sciences, Université de Monastir, Monastir 5000, Tunisiaen
dc.contributor.institutionInstitut Supérieur des Métiers du Bâtiment, des travaux publics et de l’urbanisme, Ecolé Supérieure Polytechnique, BP 4030 Nouakchott, Mauritanieen
dc.contributor.institutionDepartment of Physics, Faculty of Science and Technology, Abdou Moumouni University, BP10662 Niamey, Nigeren
dc.contributor.institutionDepartment of Physics and Material Sciences Center, Philipps-University of Marburg, Renthof 5, 35032 Marburg, Germanyen
kaust.authorShakfa, M. K.en
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