Spatiotemporal Observation of Electron-Impact Dynamics in Photovoltaic Materials Using 4D Electron Microscopy

Handle URI:
http://hdl.handle.net/10754/625022
Title:
Spatiotemporal Observation of Electron-Impact Dynamics in Photovoltaic Materials Using 4D Electron Microscopy
Authors:
Shaheen, Basamat; Sun, Jingya; Yang, Ding-Shyue ( 0000-0003-2713-9128 ) ; Mohammed, Omar F. ( 0000-0001-8500-1130 )
Abstract:
Understanding light-triggered charge carrier dynamics near photovoltaic-material surfaces and at interfaces has been a key element and one of the major challenges for the development of real-world energy devices. Visualization of such dynamics information can be obtained using the one-of-a-kind methodology of scanning ultrafast electron microscopy (S-UEM). Here, we address the fundamental issue of how the thickness of the absorber layer may significantly affect the charge carrier dynamics on material surfaces. Time-resolved snapshots indicate that the dynamics of charge carriers generated by electron impact in the electron-photon dynamical probing regime is highly sensitive to the thickness of the absorber layer, as demonstrated using CdSe films of different thicknesses as a model system. This finding not only provides the foundation for potential applications of S-UEM to a wide range of devices in the fields of chemical and materials research, but also has impact on the use and interpretation of electron beam-induced current for optimization of photoactive materials in these devices.
KAUST Department:
KAUST Solar Center, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.
Citation:
Shaheen BS, Sun J, Yang D-S, Mohammed OF (2017) Spatiotemporal Observation of Electron-Impact Dynamics in Photovoltaic Materials Using 4D Electron Microscopy. The Journal of Physical Chemistry Letters 8: 2455–2462. Available: http://dx.doi.org/10.1021/acs.jpclett.7b01116.
Publisher:
American Chemical Society (ACS)
Journal:
The Journal of Physical Chemistry Letters
Issue Date:
17-May-2017
DOI:
10.1021/acs.jpclett.7b01116
Type:
Article
ISSN:
1948-7185
Sponsors:
The work reported here was supported by King Abdullah University of Science and Technology (KAUST). D.-S.Y. acknowledges the support from the R. A. Welch Foundation (Grant No. E-1860). The authors acknowledge B. Murali for providing standard SEM images for the CdSe films.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.jpclett.7b01116
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorShaheen, Basamaten
dc.contributor.authorSun, Jingyaen
dc.contributor.authorYang, Ding-Shyueen
dc.contributor.authorMohammed, Omar F.en
dc.date.accessioned2017-06-14T12:17:34Z-
dc.date.available2017-06-14T12:17:34Z-
dc.date.issued2017-05-17en
dc.identifier.citationShaheen BS, Sun J, Yang D-S, Mohammed OF (2017) Spatiotemporal Observation of Electron-Impact Dynamics in Photovoltaic Materials Using 4D Electron Microscopy. The Journal of Physical Chemistry Letters 8: 2455–2462. Available: http://dx.doi.org/10.1021/acs.jpclett.7b01116.en
dc.identifier.issn1948-7185en
dc.identifier.doi10.1021/acs.jpclett.7b01116en
dc.identifier.urihttp://hdl.handle.net/10754/625022-
dc.description.abstractUnderstanding light-triggered charge carrier dynamics near photovoltaic-material surfaces and at interfaces has been a key element and one of the major challenges for the development of real-world energy devices. Visualization of such dynamics information can be obtained using the one-of-a-kind methodology of scanning ultrafast electron microscopy (S-UEM). Here, we address the fundamental issue of how the thickness of the absorber layer may significantly affect the charge carrier dynamics on material surfaces. Time-resolved snapshots indicate that the dynamics of charge carriers generated by electron impact in the electron-photon dynamical probing regime is highly sensitive to the thickness of the absorber layer, as demonstrated using CdSe films of different thicknesses as a model system. This finding not only provides the foundation for potential applications of S-UEM to a wide range of devices in the fields of chemical and materials research, but also has impact on the use and interpretation of electron beam-induced current for optimization of photoactive materials in these devices.en
dc.description.sponsorshipThe work reported here was supported by King Abdullah University of Science and Technology (KAUST). D.-S.Y. acknowledges the support from the R. A. Welch Foundation (Grant No. E-1860). The authors acknowledge B. Murali for providing standard SEM images for the CdSe films.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.jpclett.7b01116en
dc.titleSpatiotemporal Observation of Electron-Impact Dynamics in Photovoltaic Materials Using 4D Electron Microscopyen
dc.typeArticleen
dc.contributor.departmentKAUST Solar Center, King Abdullah University of Science and Technology , Thuwal 23955-6900, Saudi Arabia.en
dc.identifier.journalThe Journal of Physical Chemistry Lettersen
dc.contributor.institutionDepartment of Chemistry, University of Houston , Houston, Texas 77204, United States.en
kaust.authorShaheen, Basamaten
kaust.authorSun, Jingyaen
kaust.authorMohammed, Omar F.en
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