A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate

Handle URI:
http://hdl.handle.net/10754/624994
Title:
A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate
Authors:
Prabaswara, Aditya; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Zhao, Chao ( 0000-0002-9582-1068 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Alyamani, Ahmed; El-desouki, Munir; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.
KAUST Department:
King Abdullah University of Science and Technology, Saudi Arabia
Citation:
Prabaswara A, Ng TK, Zhao C, Janjua B, Alyamani A, et al. (2017) A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate. Conference on Lasers and Electro-Optics. Available: http://dx.doi.org/10.1364/cleo_si.2017.sth3n.5.
Publisher:
OSA
Journal:
Conference on Lasers and Electro-Optics
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
8-May-2017
DOI:
10.1364/cleo_si.2017.sth3n.5
Type:
Conference Paper
Sponsors:
We acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).
Additional Links:
https://www.osapublishing.org/abstract.cfm?URI=CLEO_SI-2017-STh3N.5
Appears in Collections:
Conference Papers

Full metadata record

DC FieldValue Language
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorAlyamani, Ahmeden
dc.contributor.authorEl-desouki, Muniren
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-06-14T12:04:28Z-
dc.date.available2017-06-14T12:04:28Z-
dc.date.issued2017-05-08en
dc.identifier.citationPrabaswara A, Ng TK, Zhao C, Janjua B, Alyamani A, et al. (2017) A Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrate. Conference on Lasers and Electro-Optics. Available: http://dx.doi.org/10.1364/cleo_si.2017.sth3n.5.en
dc.identifier.doi10.1364/cleo_si.2017.sth3n.5en
dc.identifier.urihttp://hdl.handle.net/10754/624994-
dc.description.abstractThe first InGaN/GaN nanowires-based yellow (λ = 590 nm) light-emitting diodes on scalable quartz substrates are demonstrated, by utilizing a thin Ti/TiN interlayer to achieve simultaneous substrate conductivity and transparency.en
dc.description.sponsorshipWe acknowledge the financial support from King Abdulaziz City for Science and Technology (KACST), Grant No. KACST TIC R2-FP-008. This work is partially supported by baseline funding, BAS/1/1614-01-01, from the King Abdullah University of Science and Technology (KAUST).en
dc.publisherOSAen
dc.relation.urlhttps://www.osapublishing.org/abstract.cfm?URI=CLEO_SI-2017-STh3N.5en
dc.titleA Yellow Emitting InGaN/GaN Nanowires-based Light Emitting Diode Grown on Scalable Quartz Substrateen
dc.typeConference Paperen
dc.contributor.departmentKing Abdullah University of Science and Technology, Saudi Arabiaen
dc.identifier.journalConference on Lasers and Electro-Opticsen
dc.contributor.institutionKing Abdulaziz City for Science and Technology, Saudi Arabiaen
kaust.authorPrabaswara, Adityaen
kaust.authorNg, Tien Kheeen
kaust.authorZhao, Chaoen
kaust.authorJanjua, Bilalen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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