Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

Handle URI:
http://hdl.handle.net/10754/624989
Title:
Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics
Authors:
Hota, Mrinal Kanti; Alshammari, Fwzah H.; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Alshareef, Husam N.
Abstract:
We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Hota MK, Alshammari FH, Salama KN, Alshareef HN (2017) Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b03078.
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
8-Jun-2017
DOI:
10.1021/acsami.7b03078
Type:
Article
ISSN:
1944-8244; 1944-8252
Sponsors:
Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsami.7b03078
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHota, Mrinal Kantien
dc.contributor.authorAlshammari, Fwzah H.en
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2017-06-14T06:39:40Z-
dc.date.available2017-06-14T06:39:40Z-
dc.date.issued2017-06-08en
dc.identifier.citationHota MK, Alshammari FH, Salama KN, Alshareef HN (2017) Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics. ACS Applied Materials & Interfaces. Available: http://dx.doi.org/10.1021/acsami.7b03078.en
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/acsami.7b03078en
dc.identifier.urihttp://hdl.handle.net/10754/624989-
dc.description.abstractWe report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.en
dc.description.sponsorshipResearch reported in this publication was supported by King Abdullah University of Science and Technology (KAUST).en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsami.7b03078en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsami.7b03078.en
dc.subjectCharge trapping flash memoryen
dc.subjectmultibit memoryen
dc.subjectnon-volatile memoryen
dc.subjectTFTen
dc.subjectTa2O5en
dc.titleTransparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectricsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalACS Applied Materials & Interfacesen
dc.eprint.versionPost-printen
dc.contributor.institutionPhysical Sciences and Engineering Divisionen
kaust.authorSalama, Khaled N.en
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