Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires

Handle URI:
http://hdl.handle.net/10754/624901
Title:
Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires
Authors:
Chen, Junze; Wu, Xue-Jun; Gong, Yue; Zhu, Yihan; Yang, Zhenzhong; Li, Bing; Lu, Qipeng; Yu, Yifu; Han, Shikui; Zhang, Zhicheng; Zong, Yun; Han, Yu ( 0000-0003-1462-1118 ) ; Gu, Lin; Zhang, Hua
Abstract:
Rational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with interface at the edges of TMD nanosheets (NSs) still remains great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructures in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs through the gradually injection of chalcogen precursors. After cation exchange of Cu in Cu2-xS-TMD heterostructures with Cd, the obtained CdS-MoS2 heterostructures remained their original architectures. Compared to the pure CdS NWs, the CdS-MoS2 heterostructures with 7.7 wt% loading of MoS2 NSs exhibit the best performance in the photocatalytic hydrogen evolution reaction with the H2 production rate up to 4,647 μmol·h-1·g-1, about 58 times that catalyzed with pure CdS NWs. Our synthetic strategy opens up a new way for the controlled synthesis of TMD-based heterostructures which could have various promising applications.
KAUST Department:
Advanced Membranes and Porous Materials Research Center; Physical Sciences and Engineering (PSE) Division
Citation:
Chen J, Wu X-J, Gong Y, Zhu Y, Yang Z, et al. (2017) Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires. Journal of the American Chemical Society. Available: http://dx.doi.org/10.1021/jacs.7b03752.
Publisher:
American Chemical Society (ACS)
Journal:
Journal of the American Chemical Society
Issue Date:
5-Jun-2017
DOI:
10.1021/jacs.7b03752
Type:
Article
ISSN:
0002-7863; 1520-5126
Sponsors:
This work was supported by MOE under AcRF Tier 2 (ARC 19/15, No. MOE2014-T2-2-093; MOE2015-T2-2-057; MOE2016-T2-2-103) and AcRF Tier 1 (2016-T1-001-147; 2016-T1-002-051), and NTU under Start-Up Grant (M4081296.070.500000) in Singapore. L. G. thanks the financial support from the National Program on Key Basic Research Project (2014CB921002) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB07030200), the Key Research Program of Frontier Sciences, CAS (Grant No. QYZDBSSW-JSC035) and National Natural Science Foundation of China (51522212, 51421002, 51672307). We would like to acknowledge the Facility for Analysis, Characterization, Testing and Simulation, Nanyang Technological University, Singapore, for use of their electron microscopy facilities.
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/jacs.7b03752
Appears in Collections:
Articles; Advanced Membranes and Porous Materials Research Center; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChen, Junzeen
dc.contributor.authorWu, Xue-Junen
dc.contributor.authorGong, Yueen
dc.contributor.authorZhu, Yihanen
dc.contributor.authorYang, Zhenzhongen
dc.contributor.authorLi, Bingen
dc.contributor.authorLu, Qipengen
dc.contributor.authorYu, Yifuen
dc.contributor.authorHan, Shikuien
dc.contributor.authorZhang, Zhichengen
dc.contributor.authorZong, Yunen
dc.contributor.authorHan, Yuen
dc.contributor.authorGu, Linen
dc.contributor.authorZhang, Huaen
dc.date.accessioned2017-06-12T08:33:41Z-
dc.date.available2017-06-12T08:33:41Z-
dc.date.issued2017-06-05en
dc.identifier.citationChen J, Wu X-J, Gong Y, Zhu Y, Yang Z, et al. (2017) Edge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowires. Journal of the American Chemical Society. Available: http://dx.doi.org/10.1021/jacs.7b03752.en
dc.identifier.issn0002-7863en
dc.identifier.issn1520-5126en
dc.identifier.doi10.1021/jacs.7b03752en
dc.identifier.urihttp://hdl.handle.net/10754/624901-
dc.description.abstractRational design and synthesis of heterostructures based on transition metal dichalcogenides (TMDs) have attracted increasing interests because of their promising applications in electronics, catalysis, etc. However, the construction of epitaxial heterostructures with interface at the edges of TMD nanosheets (NSs) still remains great challenge. Here, we report a strategy for controlled synthesis of a new type of heterostructures in which TMD NSs, including MoS2 and MoSe2, vertically grow along the longitudinal direction of one-dimensional (1D) Cu2-xS nanowires (NWs) in an epitaxial manner. The obtained Cu2-xS-TMD heterostructures with tunable loading amount and lateral size of TMD NSs are achieved by the consecutive growth of TMD NSs on Cu2-xS NWs through the gradually injection of chalcogen precursors. After cation exchange of Cu in Cu2-xS-TMD heterostructures with Cd, the obtained CdS-MoS2 heterostructures remained their original architectures. Compared to the pure CdS NWs, the CdS-MoS2 heterostructures with 7.7 wt% loading of MoS2 NSs exhibit the best performance in the photocatalytic hydrogen evolution reaction with the H2 production rate up to 4,647 μmol·h-1·g-1, about 58 times that catalyzed with pure CdS NWs. Our synthetic strategy opens up a new way for the controlled synthesis of TMD-based heterostructures which could have various promising applications.en
dc.description.sponsorshipThis work was supported by MOE under AcRF Tier 2 (ARC 19/15, No. MOE2014-T2-2-093; MOE2015-T2-2-057; MOE2016-T2-2-103) and AcRF Tier 1 (2016-T1-001-147; 2016-T1-002-051), and NTU under Start-Up Grant (M4081296.070.500000) in Singapore. L. G. thanks the financial support from the National Program on Key Basic Research Project (2014CB921002) and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB07030200), the Key Research Program of Frontier Sciences, CAS (Grant No. QYZDBSSW-JSC035) and National Natural Science Foundation of China (51522212, 51421002, 51672307). We would like to acknowledge the Facility for Analysis, Characterization, Testing and Simulation, Nanyang Technological University, Singapore, for use of their electron microscopy facilities.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/jacs.7b03752en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in Journal of the American Chemical Society, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/jacs.7b03752.en
dc.titleEdge Epitaxy of Two-dimensional MoSe2 and MoS2 Nanosheets on One-dimensional Nanowiresen
dc.typeArticleen
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Centeren
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of the American Chemical Societyen
dc.eprint.versionPost-printen
dc.contributor.institutionCenter for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.en
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.en
dc.contributor.institutionInstitute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore.en
dc.contributor.institutionCollaborative Innovation Center of Quantum Matter, Beijing 100190, China.en
dc.contributor.institutionSchool of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China.en
kaust.authorZhu, Yihanen
kaust.authorHan, Yuen
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