Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

Handle URI:
http://hdl.handle.net/10754/623926
Title:
Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors
Authors:
Montes Muñoz, Enrique ( 0000-0002-7852-7350 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green's function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Montes E, Schwingenschlögl U (2017) Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors. J Mater Chem C 5: 1409–1413. Available: http://dx.doi.org/10.1039/c6tc04429h.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
J. Mater. Chem. C
Issue Date:
24-Jan-2017
DOI:
10.1039/c6tc04429h
Type:
Article
ISSN:
2050-7526; 2050-7534
Sponsors:
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C6TC04429H#!divAbstract
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMontes Muñoz, Enriqueen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2017-05-31T11:23:14Z-
dc.date.available2017-05-31T11:23:14Z-
dc.date.issued2017-01-24en
dc.identifier.citationMontes E, Schwingenschlögl U (2017) Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors. J Mater Chem C 5: 1409–1413. Available: http://dx.doi.org/10.1039/c6tc04429h.en
dc.identifier.issn2050-7526en
dc.identifier.issn2050-7534en
dc.identifier.doi10.1039/c6tc04429hen
dc.identifier.urihttp://hdl.handle.net/10754/623926-
dc.description.abstractWe investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green's function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.en
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST).en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2017/TC/C6TC04429H#!divAbstracten
dc.titleTransport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJ. Mater. Chem. Cen
kaust.authorMontes Muñoz, Enriqueen
kaust.authorSchwingenschlögl, Udoen
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