Janus monolayers of transition metal dichalcogenides

Handle URI:
http://hdl.handle.net/10754/623858
Title:
Janus monolayers of transition metal dichalcogenides
Authors:
Lu, Ang-Yu; Zhu, Hanyu; Xiao, Jun; Chuu, Chih-Piao; Han, Yimo; Chiu, Ming-Hui ( 0000-0003-3753-8149 ) ; Cheng, Chia-Chin; Yang, Chih-Wen; Wei, Kung-Hwa; Yang, Yiming; Wang, Yuan; Sokaras, Dimosthenis; Nordlund, Dennis; Yang, Peidong; Muller, David A.; Chou, Mei-Yin; Zhang, Xiang; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Structural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Lu A-Y, Zhu H, Xiao J, Chuu C-P, Han Y, et al. (2017) Janus monolayers of transition metal dichalcogenides. Nature Nanotechnology. Available: http://dx.doi.org/10.1038/nnano.2017.100.
Publisher:
Springer Nature
Journal:
Nature Nanotechnology
Issue Date:
15-May-2017
DOI:
10.1038/nnano.2017.100
Type:
Article
ISSN:
1748-3387; 1748-3395
Sponsors:
L.-J.L. acknowledges support from the King Abdullah University of Science and Technology (Saudi Arabia), the Ministry of Science and Technology (MOST), the Taiwan Consortium of Emergent Crystalline Materials (TCECM), Academia Sinica (Taiwan) and Asian Office of Aerospace Research & Development (AOARD) under contract no. FA2386-15-1-0001 (USA). C.-P.C. and M.Y.C. acknowledge support from the Thematic Project of Academia Sinica. M.Y.C. acknowledges support from the National Science Foundation (NSF, grant no. 1542747). X.Z. acknowledges support from the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the US Department of Energy under contract no. DE-AC02-05-CH11231 (van der Waals heterostructures programme, KCWF16) for PFM imaging and analysis; and Samsung Electronics for nonlinear optical characterization. Y.H. and D.A.M. were supported by the Cornell Center for Materials Research, NSF MRSEC (DMR-1120296) and NSF grant no. MRI-1429155. P.Y. acknowledges support from the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division under contract no. DE-AC02-05CH11231 (PChem KC3103).
Additional Links:
http://www.nature.com/nnano/journal/vaop/ncurrent/full/nnano.2017.100.html
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLu, Ang-Yuen
dc.contributor.authorZhu, Hanyuen
dc.contributor.authorXiao, Junen
dc.contributor.authorChuu, Chih-Piaoen
dc.contributor.authorHan, Yimoen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorCheng, Chia-Chinen
dc.contributor.authorYang, Chih-Wenen
dc.contributor.authorWei, Kung-Hwaen
dc.contributor.authorYang, Yimingen
dc.contributor.authorWang, Yuanen
dc.contributor.authorSokaras, Dimosthenisen
dc.contributor.authorNordlund, Dennisen
dc.contributor.authorYang, Peidongen
dc.contributor.authorMuller, David A.en
dc.contributor.authorChou, Mei-Yinen
dc.contributor.authorZhang, Xiangen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2017-05-31T11:23:10Z-
dc.date.available2017-05-31T11:23:10Z-
dc.date.issued2017-05-15en
dc.identifier.citationLu A-Y, Zhu H, Xiao J, Chuu C-P, Han Y, et al. (2017) Janus monolayers of transition metal dichalcogenides. Nature Nanotechnology. Available: http://dx.doi.org/10.1038/nnano.2017.100.en
dc.identifier.issn1748-3387en
dc.identifier.issn1748-3395en
dc.identifier.doi10.1038/nnano.2017.100en
dc.identifier.urihttp://hdl.handle.net/10754/623858-
dc.description.abstractStructural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements.en
dc.description.sponsorshipL.-J.L. acknowledges support from the King Abdullah University of Science and Technology (Saudi Arabia), the Ministry of Science and Technology (MOST), the Taiwan Consortium of Emergent Crystalline Materials (TCECM), Academia Sinica (Taiwan) and Asian Office of Aerospace Research & Development (AOARD) under contract no. FA2386-15-1-0001 (USA). C.-P.C. and M.Y.C. acknowledge support from the Thematic Project of Academia Sinica. M.Y.C. acknowledges support from the National Science Foundation (NSF, grant no. 1542747). X.Z. acknowledges support from the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the US Department of Energy under contract no. DE-AC02-05-CH11231 (van der Waals heterostructures programme, KCWF16) for PFM imaging and analysis; and Samsung Electronics for nonlinear optical characterization. Y.H. and D.A.M. were supported by the Cornell Center for Materials Research, NSF MRSEC (DMR-1120296) and NSF grant no. MRI-1429155. P.Y. acknowledges support from the US Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division under contract no. DE-AC02-05CH11231 (PChem KC3103).en
dc.publisherSpringer Natureen
dc.relation.urlhttp://www.nature.com/nnano/journal/vaop/ncurrent/full/nnano.2017.100.htmlen
dc.titleJanus monolayers of transition metal dichalcogenidesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNature Nanotechnologyen
dc.contributor.institutionNSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.en
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.en
dc.contributor.institutionSchool of Applied &Engineering Physics, Cornell University, Ithaca, New York 14850, USA.en
dc.contributor.institutionDepartment of Material Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.en
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.en
dc.contributor.institutionSLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.en
dc.contributor.institutionKavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA.en
dc.contributor.institutionSchool of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.en
kaust.authorLu, Ang-Yuen
kaust.authorChiu, Ming-Huien
kaust.authorYang, Chih-Wenen
kaust.authorLi, Lain-Jongen
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