Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers

Handle URI:
http://hdl.handle.net/10754/623856
Title:
Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers
Authors:
Zhang, Qiang ( 0000-0001-8519-5158 ) ; Li, Peng ( 0000-0001-8633-9045 ) ; Wen, Yan; He, Xin ( 0000-0001-7009-2826 ) ; Zhao, Yuelei; Zhang, Junli; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
The effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the ${{\left(\text{N}{{\text{i}}_{\frac{36}{n}~\text{nm}}}/\text{A}{{\text{u}}_{\frac{12}{n}~\text{nm}}}\right)}_{n}}$ multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5–300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (${{\rho}_{\text{AHE}}}$ ) was enhanced by more than six times at 5 K from n  =  1 to n  =  12 due to the increased interfacial scattering, whereas the longitudinal resistivity (${{\rho}_{xx}}$ ) was increased nearly three times. A scaling relation ${{\rho}_{\text{AHE}}}\sim \rho _{xx}^{\gamma}$ with $\gamma =1.85$ was obtained for ${{\rho}_{\text{AHE}}}$ and ${{\rho}_{xx}}$ measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation ${{\rho}_{\text{AHE}}}=\alpha {{\rho}_{xx0}}+\beta \rho _{xx0}^{2}+b\rho _{xx}^{2}$ (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Zhang Q, Li P, Wen Y, He X, Zhao Y, et al. (2017) Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers. Journal of Physics D: Applied Physics 50: 235002. Available: http://dx.doi.org/10.1088/1361-6463/aa6e84.
Publisher:
IOP Publishing
Journal:
Journal of Physics D: Applied Physics
KAUST Grant Number:
REP/1/2708-01; REP/1/2719-01
Issue Date:
21-Apr-2017
DOI:
10.1088/1361-6463/aa6e84
Type:
Article
ISSN:
0022-3727; 1361-6463
The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). QZ and PL acknowledge the financial support by the KAUST sensor project (REP/1/2708-01). XH acknowledges the financial support by the KAUST sensor project (REP/1/2719-01).
http://iopscience.iop.org/article/10.1088/1361-6463/aa6e84/meta
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

DC FieldValue Language
dc.contributor.authorZhang, Qiangen
dc.contributor.authorLi, Pengen
dc.contributor.authorWen, Yanen
dc.contributor.authorHe, Xinen
dc.contributor.authorZhao, Yueleien
dc.contributor.authorZhang, Junlien
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2017-05-31T11:23:10Z-
dc.date.available2017-05-31T11:23:10Z-
dc.date.issued2017-04-21en
dc.identifier.citationZhang Q, Li P, Wen Y, He X, Zhao Y, et al. (2017) Interfacial scattering effect on anomalous Hall effect in Ni/Au multilayers. Journal of Physics D: Applied Physics 50: 235002. Available: http://dx.doi.org/10.1088/1361-6463/aa6e84.en
dc.identifier.issn0022-3727en
dc.identifier.issn1361-6463en
dc.identifier.doi10.1088/1361-6463/aa6e84en
dc.identifier.urihttp://hdl.handle.net/10754/623856-
dc.description.abstractThe effect of interfacial scattering on anomalous Hall effect (AHE) was studied in the ${{\left(\text{N}{{\text{i}}_{\frac{36}{n}~\text{nm}}}/\text{A}{{\text{u}}_{\frac{12}{n}~\text{nm}}}\right)}_{n}}$ multilayers. Field-dependent Hall resistivity was measured in the temperature range of 5–300 K with the magnetic field up to 50 kOe. The anomalous Hall resistivity (${{\rho}_{\text{AHE}}}$ ) was enhanced by more than six times at 5 K from n  =  1 to n  =  12 due to the increased interfacial scattering, whereas the longitudinal resistivity (${{\rho}_{xx}}$ ) was increased nearly three times. A scaling relation ${{\rho}_{\text{AHE}}}\sim \rho _{xx}^{\gamma}$ with $\gamma =1.85$ was obtained for ${{\rho}_{\text{AHE}}}$ and ${{\rho}_{xx}}$ measured at 5 K, indicating that the dominant mechanism(s) of the AHE in these multilayers should be side-jump or/and intrinsic in nature. The new scaling relation ${{\rho}_{\text{AHE}}}=\alpha {{\rho}_{xx0}}+\beta \rho _{xx0}^{2}+b\rho _{xx}^{2}$ (Tian et al 2009 Phys. Rev. Lett. 103 087206) has been applied to our data to identify the origin of the AHE in this type of multilayer.en
dc.description.sponsorshipThe research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). QZ and PL acknowledge the financial support by the KAUST sensor project (REP/1/2708-01). XH acknowledges the financial support by the KAUST sensor project (REP/1/2719-01).en
dc.publisherIOP Publishingen
dc.relation.urlhttp://iopscience.iop.org/article/10.1088/1361-6463/aa6e84/metaen
dc.titleInterfacial scattering effect on anomalous Hall effect in Ni/Au multilayersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Physics D: Applied Physicsen
kaust.authorZhang, Qiangen
kaust.authorLi, Pengen
kaust.authorWen, Yanen
kaust.authorHe, Xinen
kaust.authorZhao, Yueleien
kaust.authorZhang, Junlien
kaust.authorZhang, Xixiangen
kaust.grant.numberREP/1/2708-01en
kaust.grant.numberREP/1/2719-01en