Exploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Handle URI:
http://hdl.handle.net/10754/623834
Title:
Exploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors
Authors:
Isakov, Ivan; Faber, Hendrik; Grell, Max; Wyatt-Moon, Gwenhivir; Pliatsikas, Nikos; Kehagias, Thomas; Dimitrakopulos, George P.; Patsalas, Panos P.; Li, Ruipeng; Anthopoulos, Thomas D. ( 0000-0002-0978-8813 )
Abstract:
The growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Isakov I, Faber H, Grell M, Wyatt-Moon G, Pliatsikas N, et al. (2017) Exploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors. Advanced Functional Materials: 1606407. Available: http://dx.doi.org/10.1002/adfm.201606407.
Publisher:
Wiley-Blackwell
Journal:
Advanced Functional Materials
Issue Date:
6-Apr-2017
DOI:
10.1002/adfm.201606407
Type:
Article
ISSN:
1616-301X
Sponsors:
I.I., M.G., and T.D.A. acknowledge the financial support from PragmatIC Printing Limited (Company Number 07423954) and from the Engineering and Physical Sciences Research Council (EPSRC) (Grant No. EP/G037515/1). CHESS was supported by the NSF & NIH/NIGMS via NSF Award No. DMR-1332208.
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/adfm.201606407/full
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorIsakov, Ivanen
dc.contributor.authorFaber, Hendriken
dc.contributor.authorGrell, Maxen
dc.contributor.authorWyatt-Moon, Gwenhiviren
dc.contributor.authorPliatsikas, Nikosen
dc.contributor.authorKehagias, Thomasen
dc.contributor.authorDimitrakopulos, George P.en
dc.contributor.authorPatsalas, Panos P.en
dc.contributor.authorLi, Ruipengen
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2017-05-31T11:23:08Z-
dc.date.available2017-05-31T11:23:08Z-
dc.date.issued2017-04-06en
dc.identifier.citationIsakov I, Faber H, Grell M, Wyatt-Moon G, Pliatsikas N, et al. (2017) Exploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors. Advanced Functional Materials: 1606407. Available: http://dx.doi.org/10.1002/adfm.201606407.en
dc.identifier.issn1616-301Xen
dc.identifier.doi10.1002/adfm.201606407en
dc.identifier.urihttp://hdl.handle.net/10754/623834-
dc.description.abstractThe growth mechanism of indium oxide (InO) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline InO layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of InO are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized InO layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm V s, a value amongst the highest reported to date for solution-processed InO TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.en
dc.description.sponsorshipI.I., M.G., and T.D.A. acknowledge the financial support from PragmatIC Printing Limited (Company Number 07423954) and from the Engineering and Physical Sciences Research Council (EPSRC) (Grant No. EP/G037515/1). CHESS was supported by the NSF & NIH/NIGMS via NSF Award No. DMR-1332208.en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/adfm.201606407/fullen
dc.subjectIndium oxideen
dc.subjectLeidenfrost effecten
dc.subjectSolution processingen
dc.subjectSpray pyrolysisen
dc.subjectThin-film transistorsen
dc.titleExploring the Leidenfrost Effect for the Deposition of High-Quality In2 O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistorsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionBlackett Laboratory and Centre for Plastic Electronics Imperial College London London SW7 2AZ UKen
dc.contributor.institutionDepartment of Physics Aristotle University of Thessaloniki 54124 Thessaloniki Greeceen
dc.contributor.institutionCornell High Energy Synchrotron Source Wilson Laboratory Cornell University Ithaca 14853NY USAen
kaust.authorAnthopoulos, Thomas D.en
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