Nanowires-based light emitters on thermally and electrically conductive substrates and of making same

Handle URI:
http://hdl.handle.net/10754/623725
Title:
Nanowires-based light emitters on thermally and electrically conductive substrates and of making same
Authors:
Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Zhao, Chao ( 0000-0002-9582-1068 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 )
Assignee:
King Abdullah University Of Science And Technology
Abstract:
Elemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Issue Date:
27-Apr-2017
Submitted date:
2015-10-20
Type:
Patent
Application Number:
WO 2017068450 A1
Patent Status:
Published Application
Additional Links:
http://www.google.com/patents/WO2017068450A1; http://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017068450A1&KC=A1&FT=D
Appears in Collections:
Patents

Full metadata record

DC FieldValue Language
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorZhao, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.date.accessioned2017-05-29T07:04:10Z-
dc.date.available2017-05-29T07:04:10Z-
dc.date.issued2017-04-27-
dc.date.submitted2015-10-20-
dc.identifier.urihttp://hdl.handle.net/10754/623725-
dc.description.abstractElemental or compound semiconductors on metal substrates and methods of growing them are provided. The methods can include the steps of: (i) providing a metal substrate; (ii) adding an interlayer on a surface of the metal substrate, and (iii) growing semiconductor nanowires on the interlayer using a semiconductor epitaxy growth system to form the elemental or compound semiconductor. The method can include direct growth of high quality group III-V and group III-N based materials in the form of nanowires and nanowires-based devices on metal substrates. The nanowires on all- metal scheme greatly simplifies the fabrication process of nanowires based high power light emitters.en
dc.relation.urlhttp://www.google.com/patents/WO2017068450A1en
dc.relation.urlhttp://worldwide.espacenet.com/publicationDetails/biblio?CC=WO&NR=2017068450A1&KC=A1&FT=Den
dc.titleNanowires-based light emitters on thermally and electrically conductive substrates and of making sameen
dc.typePatenten
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.description.statusPublished Applicationen
dc.contributor.assigneeKing Abdullah University Of Science And Technologyen
dc.description.countryWorld Intellectual Property Organization (WIPO)en
dc.identifier.applicationnumberWO 2017068450 A1en
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