Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

Handle URI:
http://hdl.handle.net/10754/623711
Title:
Electrical transport characterization of Al and Sn doped Mg 2 Si thin films
Authors:
Zhang, Bo; Zheng, Tao; Sun, Ce; Guo, Zaibing; Kim, Moon J.; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Quevedo-Lopez, Manuel; Gnade, Bruce E.
Abstract:
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
KAUST Department:
Advanced Nanofabrication and Thin Film Core Lab; Physical Sciences and Engineering (PSE) Division
Publisher:
Elsevier BV
Journal:
Journal of Alloys and Compounds
Issue Date:
22-May-2017
DOI:
10.1016/j.jallcom.2017.05.224
Type:
Article
ISSN:
0925-8388
Sponsors:
The work was partially supported by the II-IV foundation and the University of Texas at Dallas. We thank Mr. Wallace Martin, Dr. Gordon Pollock and Mr. John Maynard from the cleanroom of the University of Texas at Dallas for their help with film preparation. We acknowledge Dr. Jian Wang from the University of Texas at Dallas for his fruitful discussions.
Additional Links:
http://www.sciencedirect.com/science/article/pii/S092583881731842X
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Boen
dc.contributor.authorZheng, Taoen
dc.contributor.authorSun, Ceen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorKim, Moon J.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorQuevedo-Lopez, Manuelen
dc.contributor.authorGnade, Bruce E.en
dc.date.accessioned2017-05-25T10:55:13Z-
dc.date.available2017-05-25T10:55:13Z-
dc.date.issued2017-05-22en
dc.identifier.issn0925-8388en
dc.identifier.doi10.1016/j.jallcom.2017.05.224en
dc.identifier.urihttp://hdl.handle.net/10754/623711-
dc.description.abstractThin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.en
dc.description.sponsorshipThe work was partially supported by the II-IV foundation and the University of Texas at Dallas. We thank Mr. Wallace Martin, Dr. Gordon Pollock and Mr. John Maynard from the cleanroom of the University of Texas at Dallas for their help with film preparation. We acknowledge Dr. Jian Wang from the University of Texas at Dallas for his fruitful discussions.en
dc.publisherElsevier BVen
dc.relation.urlhttp://www.sciencedirect.com/science/article/pii/S092583881731842Xen
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Journal of Alloys and Compounds. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Alloys and Compounds, [, , (2017-05-22)] DOI: 10.1016/j.jallcom.2017.05.224 . © 2017. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectThin filmsen
dc.subjectSputteringen
dc.subjectSn, Al doped Mg2Si filmsen
dc.subjectThermoelectricen
dc.subjectElectrical propertiesen
dc.subjectHall measurementsen
dc.titleElectrical transport characterization of Al and Sn doped Mg 2 Si thin filmsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Alloys and Compoundsen
dc.eprint.versionPost-printen
dc.contributor.institutionMaterials Science Department, University of Texas at Dallas, Richardson, TX 75080, USAen
dc.contributor.institutionLyle School of Engineering, Southern Methodist University, Dallas, TX 75275, USAen
kaust.authorGuo, Zaibingen
kaust.authorAlshareef, Husam N.en
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