InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

Handle URI:
http://hdl.handle.net/10754/623665
Title:
InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters
Authors:
Zhao, Chao ( 0000-0002-9582-1068 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Tseng, Chien-Chih ( 0000-0003-0676-5664 ) ; Li, Jun; Shi, Yumeng; Wei, Nini; Zhang, Daliang; Consiglio, Giuseppe Bernardo; Prabaswara, Aditya; Alhamoud, Abdullah Ali; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.
KAUST Department:
Photonics Laboratory; Physical Sciences and Engineering (PSE) Division; Imaging and Characterization Core Lab
Citation:
Zhao C, Ng TK, Tseng C-C, Li J, Shi Y, et al. (2017) InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters. RSC Adv 7: 26665–26672. Available: http://dx.doi.org/10.1039/C7RA03590J.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
RSC Adv.
KAUST Grant Number:
BAS/1/1614-01-01
Issue Date:
18-May-2017
DOI:
10.1039/C7RA03590J
Type:
Article
ISSN:
2046-2069
Sponsors:
The authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).
Additional Links:
http://pubs.rsc.org/en/content/articlehtml/2017/RA/C7RA03590J
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorTseng, Chien-Chihen
dc.contributor.authorLi, Junen
dc.contributor.authorShi, Yumengen
dc.contributor.authorWei, Ninien
dc.contributor.authorZhang, Daliangen
dc.contributor.authorConsiglio, Giuseppe Bernardoen
dc.contributor.authorPrabaswara, Adityaen
dc.contributor.authorAlhamoud, Abdullah Alien
dc.contributor.authorAlbadri, Abdulrahman M.en
dc.contributor.authorAlyamani, Ahmed Y.en
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2017-05-18T12:41:31Z-
dc.date.available2017-05-18T12:41:31Z-
dc.date.issued2017-05-18en
dc.identifier.citationZhao C, Ng TK, Tseng C-C, Li J, Shi Y, et al. (2017) InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters. RSC Adv 7: 26665–26672. Available: http://dx.doi.org/10.1039/C7RA03590J.en
dc.identifier.issn2046-2069en
dc.identifier.doi10.1039/C7RA03590Jen
dc.identifier.urihttp://hdl.handle.net/10754/623665-
dc.description.abstractThe recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.en
dc.description.sponsorshipThe authors acknowledge funding support from King Abdulaziz City for Science and Technology (KACST) Technology Innovation Center (TIC) for Solid State Lighting (KACST TIC R2-FP-008), and KAUST baseline funding (BAS/1/1614-01-01).en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/content/articlehtml/2017/RA/C7RA03590Jen
dc.rightsThis Open Access Article is licensed under a Creative Commons Attribution 3.0 Unported Licenceen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.titleInGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emittersen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentImaging and Characterization Core Laben
dc.identifier.journalRSC Adv.en
dc.contributor.institutionKing Abdulaziz City for Science and Technology (KACST), National Center for Nanotechnology, Riyadh 11442-6086, Saudi Arabiaen
kaust.authorZhao, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorTseng, Chien-Chihen
kaust.authorLi, Junen
kaust.authorShi, Yumengen
kaust.authorWei, Ninien
kaust.authorZhang, Daliangen
kaust.authorConsiglio, Giuseppe Bernardoen
kaust.authorPrabaswara, Adityaen
kaust.authorAlhamoud, Abdullah Alien
kaust.authorZhang, Xixiangen
kaust.authorLi, Lain-Jongen
kaust.authorOoi, Boon S.en
kaust.grant.numberBAS/1/1614-01-01en
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