Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes

Handle URI:
http://hdl.handle.net/10754/623610
Title:
Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes
Authors:
Myzaferi, A. ( 0000-0002-0527-1059 ) ; Reading, A. H.; Cohen, D. A.; Farrell, R. M.; Nakamura, S.; Speck, J. S.; DenBaars, S. P. ( 0000-0002-6612-5258 )
Abstract:
The bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.
Citation:
Myzaferi A, Reading AH, Cohen DA, Farrell RM, Nakamura S, et al. (2016) Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes. Applied Physics Letters 109: 061109. Available: http://dx.doi.org/10.1063/1.4960791.
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
11-Aug-2016
DOI:
10.1063/1.4960791
Type:
Article
ISSN:
0003-6951; 1077-3118
Sponsors:
This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorMyzaferi, A.en
dc.contributor.authorReading, A. H.en
dc.contributor.authorCohen, D. A.en
dc.contributor.authorFarrell, R. M.en
dc.contributor.authorNakamura, S.en
dc.contributor.authorSpeck, J. S.en
dc.contributor.authorDenBaars, S. P.en
dc.date.accessioned2017-05-15T10:35:11Z-
dc.date.available2017-05-15T10:35:11Z-
dc.date.issued2016-08-11en
dc.identifier.citationMyzaferi A, Reading AH, Cohen DA, Farrell RM, Nakamura S, et al. (2016) Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes. Applied Physics Letters 109: 061109. Available: http://dx.doi.org/10.1063/1.4960791.en
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4960791en
dc.identifier.urihttp://hdl.handle.net/10754/623610-
dc.description.abstractThe bottom cladding design of semipolar III-nitride laser diodes is limited by stress relaxation via misfit dislocations that form via the glide of pre-existing threading dislocations (TDs), whereas the top cladding is limited by the growth time and temperature of the p-type layers. These design limitations have individually been addressed by using limited area epitaxy (LAE) to block TD glide in n-type AlGaN bottom cladding layers and by using transparent conducting oxide (TCO) top cladding layers to reduce the growth time and temperature of the p-type layers. In addition, a TCO-based top cladding should have significantly lower resistivity than a conventional p-type (Al)GaN top cladding. In this work, LAE and indium-tin-oxide cladding layers are used simultaneously in a (202⎯⎯1) III-nitride laser structure. Lasing was achieved at 446 nm with a threshold current density of 8.5 kA/cm2 and a threshold voltage of 8.4 V.en
dc.description.sponsorshipThis work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC program (DMR-1121053).en
dc.publisherAIP Publishingen
dc.titleTransparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodesen
dc.typeArticleen
dc.identifier.journalApplied Physics Lettersen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USAen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, California 93106, USAen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.