Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

Handle URI:
http://hdl.handle.net/10754/623578
Title:
Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates
Authors:
Hwang, David; Yonkee, Benjamin P.; Addin, Burhan Saif; Farrell, Robert M.; Nakamura, Shuji; Speck, James S.; DenBaars, Steven
Abstract:
We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).
Citation:
Hwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, et al. (2016) Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express 24: 22875. Available: http://dx.doi.org/10.1364/oe.24.022875.
Publisher:
The Optical Society
Journal:
Optics Express
Issue Date:
23-Sep-2016
DOI:
10.1364/oe.24.022875
Type:
Article
ISSN:
1094-4087
Sponsors:
KACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085.
Additional Links:
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-20-22875
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorHwang, Daviden
dc.contributor.authorYonkee, Benjamin P.en
dc.contributor.authorAddin, Burhan Saifen
dc.contributor.authorFarrell, Robert M.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorSpeck, James S.en
dc.contributor.authorDenBaars, Stevenen
dc.date.accessioned2017-05-15T10:35:09Z-
dc.date.available2017-05-15T10:35:09Z-
dc.date.issued2016-09-23en
dc.identifier.citationHwang D, Yonkee BP, Addin BS, Farrell RM, Nakamura S, et al. (2016) Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. Optics Express 24: 22875. Available: http://dx.doi.org/10.1364/oe.24.022875.en
dc.identifier.issn1094-4087en
dc.identifier.doi10.1364/oe.24.022875en
dc.identifier.urihttp://hdl.handle.net/10754/623578-
dc.description.abstractWe demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).en
dc.description.sponsorshipKACST-KAUST-UCSB Solid State Lighting Program (SSLP) and the Solid State Lighting & Energy Electronics Center (SSLEEC); National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); UCSB MRL, supported by the NSF MRSEC Program (DMR05-20415). D. H. was supported by the National Science Foundation Graduate Research Fellowship under Grant No. DGE-1144085.en
dc.publisherThe Optical Societyen
dc.relation.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-20-22875en
dc.rightsThis paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-24-20-22875. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.en
dc.titlePhotoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substratesen
dc.typeArticleen
dc.identifier.journalOptics Expressen
dc.eprint.versionPost-printen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA 93106, USAen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USAen
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