Optoelectronic properties of doped hydrothermal ZnO thin films

Handle URI:
http://hdl.handle.net/10754/623576
Title:
Optoelectronic properties of doped hydrothermal ZnO thin films
Authors:
Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.
Abstract:
Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.
Citation:
Mughal AJ, Carberry B, Oh SH, Myzaferi A, Speck JS, et al. (2017) Optoelectronic properties of doped hydrothermal ZnO thin films. physica status solidi (a): 1600941. Available: http://dx.doi.org/10.1002/pssa.201600941.
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (a)
Issue Date:
10-Mar-2017
DOI:
10.1002/pssa.201600941
Type:
Article
ISSN:
1862-6300
Sponsors:
This work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara. A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).
Additional Links:
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600941/abstract
Appears in Collections:
Publications Acknowledging KAUST Support

Full metadata record

DC FieldValue Language
dc.contributor.authorMughal, Asad J.en
dc.contributor.authorCarberry, Benjaminen
dc.contributor.authorOh, Sang Hoen
dc.contributor.authorMyzaferi, Anisaen
dc.contributor.authorSpeck, James S.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorDenBaars, Steven P.en
dc.date.accessioned2017-05-15T10:35:09Z-
dc.date.available2017-05-15T10:35:09Z-
dc.date.issued2017-03-10en
dc.identifier.citationMughal AJ, Carberry B, Oh SH, Myzaferi A, Speck JS, et al. (2017) Optoelectronic properties of doped hydrothermal ZnO thin films. physica status solidi (a): 1600941. Available: http://dx.doi.org/10.1002/pssa.201600941.en
dc.identifier.issn1862-6300en
dc.identifier.doi10.1002/pssa.201600941en
dc.identifier.urihttp://hdl.handle.net/10754/623576-
dc.description.abstractGroup III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.en
dc.description.sponsorshipThis work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara. A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).en
dc.publisherWiley-Blackwellen
dc.relation.urlhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201600941/abstracten
dc.rightsThis is the peer reviewed version of the following article: Optoelectronic properties of doped hydrothermal ZnO thin films, which has been published in final form at http://doi.org/10.1002/pssa.201600941. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.en
dc.subjectatomic layer depositionen
dc.subjecthydrothermal depositionen
dc.subjecttransparent conductorsen
dc.subjectzinc oxideen
dc.titleOptoelectronic properties of doped hydrothermal ZnO thin filmsen
dc.typeArticleen
dc.identifier.journalphysica status solidi (a)en
dc.eprint.versionPost-printen
dc.contributor.institutionMaterials Department; University of California Santa Barbara; Santa Barbara California 93106 USAen
dc.contributor.institutionDepartment of Electrical and Computer Engineering; University of Florida; Gainesville Florida 32611 USAen
dc.contributor.institutionDepartment of Electrical and Computer Engineering; University of California Santa Barbara; Santa Barbara California 93106 USAen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.