# Hybrid tunnel junction contacts to III–nitride light-emitting diodes

Handle URI:
http://hdl.handle.net/10754/623554
Title:
Hybrid tunnel junction contacts to III–nitride light-emitting diodes
Authors:
Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.
Abstract:
In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\bar{2}\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.
Citation:
Young EC, Yonkee BP, Wu F, Oh SH, DenBaars SP, et al. (2016) Hybrid tunnel junction contacts to III–nitride light-emitting diodes. Applied Physics Express 9: 022102. Available: http://dx.doi.org/10.7567/apex.9.022102.
Publisher:
Japan Society of Applied Physics
Journal:
Applied Physics Express
Issue Date:
26-Jan-2016
DOI:
10.7567/apex.9.022102
Type:
Article
ISSN:
1882-0778; 1882-0786
This work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara. The work was also funded in part through the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).
Appears in Collections:
Publications Acknowledging KAUST Support

DC FieldValue Language
dc.contributor.authorYoung, Erin C.en
dc.contributor.authorYonkee, Benjamin P.en
dc.contributor.authorWu, Fengen
dc.contributor.authorOh, Sang Hoen
dc.contributor.authorDenBaars, Steven P.en
dc.contributor.authorNakamura, Shujien
dc.contributor.authorSpeck, James S.en
dc.date.accessioned2017-05-15T10:35:08Z-
dc.date.available2017-05-15T10:35:08Z-
dc.date.issued2016-01-26en
dc.identifier.citationYoung EC, Yonkee BP, Wu F, Oh SH, DenBaars SP, et al. (2016) Hybrid tunnel junction contacts to III–nitride light-emitting diodes. Applied Physics Express 9: 022102. Available: http://dx.doi.org/10.7567/apex.9.022102.en
dc.identifier.issn1882-0778en
dc.identifier.issn1882-0786en
dc.identifier.doi10.7567/apex.9.022102en
dc.identifier.urihttp://hdl.handle.net/10754/623554-
dc.description.abstractIn this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\bar{2}\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.en
dc.description.sponsorshipThis work was funded in part by the Solid State Lighting Program (SSLP), a collaboration between King Abdulaziz City for Science and Technology (KACST), King Abdullah University of Science and Technology (KAUST), and University of California, Santa Barbara. The work was also funded in part through the Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara (UCSB). A portion of this work was carried out in the UCSB nanofabrication facility, with support from the NSF NNIN network (ECS-03357650), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).en
dc.publisherJapan Society of Applied Physicsen
dc.titleHybrid tunnel junction contacts to III–nitride light-emitting diodesen
dc.typeArticleen
dc.identifier.journalApplied Physics Expressen
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA 93106, U.S.A.en