CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

Handle URI:
http://hdl.handle.net/10754/623531
Title:
CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates
Authors:
Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.
Abstract:
Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.
Citation:
Pourhashemi A, Farrell RM, Cohen DA, Becerra DL, DenBaars SP, et al. (2016) CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates . Electronics Letters 52: 2003–2005. Available: http://dx.doi.org/10.1049/el.2016.3055.
Publisher:
Institution of Engineering and Technology (IET)
Journal:
Electronics Letters
Issue Date:
11-Oct-2016
DOI:
10.1049/el.2016.3055
Type:
Article
ISSN:
0013-5194; 1350-911X
Sponsors:
This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC programme (DMR-1121053).
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Full metadata record

DC FieldValue Language
dc.contributor.authorPourhashemi, A.en
dc.contributor.authorFarrell, R.M.en
dc.contributor.authorCohen, D.A.en
dc.contributor.authorBecerra, D.L.en
dc.contributor.authorDenBaars, S.P.en
dc.contributor.authorNakamura, S.en
dc.date.accessioned2017-05-15T10:35:06Z-
dc.date.available2017-05-15T10:35:06Z-
dc.date.issued2016-10-11en
dc.identifier.citationPourhashemi A, Farrell RM, Cohen DA, Becerra DL, DenBaars SP, et al. (2016) CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates . Electronics Letters 52: 2003–2005. Available: http://dx.doi.org/10.1049/el.2016.3055.en
dc.identifier.issn0013-5194en
dc.identifier.issn1350-911Xen
dc.identifier.doi10.1049/el.2016.3055en
dc.identifier.urihttp://hdl.handle.net/10754/623531-
dc.description.abstractContinuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.en
dc.description.sponsorshipThis work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was done in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB MRL, which is supported by the NSF MRSEC programme (DMR-1121053).en
dc.publisherInstitution of Engineering and Technology (IET)en
dc.subjectpolishingen
dc.subjectgallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectsemiconductor lasersen
dc.subjectridge waveguidesen
dc.subjectoptical fabricationen
dc.subjectwaveguide lasersen
dc.subjectlaser beamsen
dc.titleCW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substratesen
dc.typeArticleen
dc.identifier.journalElectronics Lettersen
dc.contributor.institutionUniversity of California, USAen
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