Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures

Handle URI:
http://hdl.handle.net/10754/623530
Title:
Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures
Authors:
Smirnov, A. M.; Young, E. C.; Bougrov, V. E.; Speck, J. S.; Romanov, A. E.
Abstract:
We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.
Citation:
Smirnov AM, Young EC, Bougrov VE, Speck JS, Romanov AE (2016) Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures. APL Materials 4: 016105. Available: http://dx.doi.org/10.1063/1.4939907.
Publisher:
AIP Publishing
Journal:
APL Materials
Issue Date:
20-Jan-2016
DOI:
10.1063/1.4939907
Type:
Article
ISSN:
2166-532X
Sponsors:
A.M.S., V.E.B., and A.E.R. received support for conducting theoretical analysis of dislocation behavior in wide band gap semiconductors from Russian Science Foundation Project No. 14-29-00086. The UCSB work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program.
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DC FieldValue Language
dc.contributor.authorSmirnov, A. M.en
dc.contributor.authorYoung, E. C.en
dc.contributor.authorBougrov, V. E.en
dc.contributor.authorSpeck, J. S.en
dc.contributor.authorRomanov, A. E.en
dc.date.accessioned2017-05-15T10:35:06Z-
dc.date.available2017-05-15T10:35:06Z-
dc.date.issued2016-01-20en
dc.identifier.citationSmirnov AM, Young EC, Bougrov VE, Speck JS, Romanov AE (2016) Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures. APL Materials 4: 016105. Available: http://dx.doi.org/10.1063/1.4939907.en
dc.identifier.issn2166-532Xen
dc.identifier.doi10.1063/1.4939907en
dc.identifier.urihttp://hdl.handle.net/10754/623530-
dc.description.abstractWe calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there is a switch of stress relaxation modes from generation of basal slip originated MDs to PSMDs after the angle between c-axis in wurtzite crystal structure and the direction of semipolar growth reaches a particular value, e.g., ∼70° for Al0.13Ga0.87N/GaN (h0h̄ 1) semipolar heterostructures. This means that for some semipolar growth orientations of III-nitride heterostructures biaxial relaxation of misfit stress can be realized. The results of modeling are compared to experimental data on the onset of plastic relaxation in AlxGa1−xN/GaN heterostructures.en
dc.description.sponsorshipA.M.S., V.E.B., and A.E.R. received support for conducting theoretical analysis of dislocation behavior in wide band gap semiconductors from Russian Science Foundation Project No. 14-29-00086. The UCSB work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program.en
dc.publisherAIP Publishingen
dc.titleCritical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructuresen
dc.typeArticleen
dc.identifier.journalAPL Materialsen
dc.contributor.institutionITMO University, St. Petersburg 197101, Russiaen
dc.contributor.institutionMaterials Department, UCSB, Santa Barbara, California 93106, USAen
dc.contributor.institutionIoffe Physical-Technical Institute RAS, St. Petersburg 194021, Russiaen
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