Handle URI:
http://hdl.handle.net/10754/623519
Title:
Calcium as a nonradiative recombination center in InGaN
Authors:
Shen, Jimmy-Xuan; Wickramaratne, Darshana; Dreyer, Cyrus E.; Alkauskas, Audrius; Young, Erin; Speck, James S.; Van de Walle, Chris G.
Abstract:
Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm−3, the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s−1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.
Citation:
Shen J-X, Wickramaratne D, Dreyer CE, Alkauskas A, Young E, et al. (2017) Calcium as a nonradiative recombination center in InGaN. Applied Physics Express 10: 021001. Available: http://dx.doi.org/10.7567/apex.10.021001.
Publisher:
Japan Society of Applied Physics
Journal:
Applied Physics Express
Issue Date:
13-Jan-2017
DOI:
10.7567/apex.10.021001
Type:
Article
ISSN:
1882-0778; 1882-0786
Sponsors:
J.S., D.W., and C.V.d.W were supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award No. DE-SC0010689. A.A. was supported by the Marie Sklodowska-Curie Action of the European Union (Project Nitride-SRH, Grant No. 657054). E.Y. and J.S.S. were supported by the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the National Science Foundation IMI Program (Grant No. DMR08-43934). Computational resources were provided by the National Energy Research Scientific Computing Center, which is supported by the DOE Office of Science under Contract No. DE-AC02-05CH11231.
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Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Jimmy-Xuanen
dc.contributor.authorWickramaratne, Darshanaen
dc.contributor.authorDreyer, Cyrus E.en
dc.contributor.authorAlkauskas, Audriusen
dc.contributor.authorYoung, Erinen
dc.contributor.authorSpeck, James S.en
dc.contributor.authorVan de Walle, Chris G.en
dc.date.accessioned2017-05-15T10:35:06Z-
dc.date.available2017-05-15T10:35:06Z-
dc.date.issued2017-01-13en
dc.identifier.citationShen J-X, Wickramaratne D, Dreyer CE, Alkauskas A, Young E, et al. (2017) Calcium as a nonradiative recombination center in InGaN. Applied Physics Express 10: 021001. Available: http://dx.doi.org/10.7567/apex.10.021001.en
dc.identifier.issn1882-0778en
dc.identifier.issn1882-0786en
dc.identifier.doi10.7567/apex.10.021001en
dc.identifier.urihttp://hdl.handle.net/10754/623519-
dc.description.abstractCalcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm−3, the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s−1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodes.en
dc.description.sponsorshipJ.S., D.W., and C.V.d.W were supported by the U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) under Award No. DE-SC0010689. A.A. was supported by the Marie Sklodowska-Curie Action of the European Union (Project Nitride-SRH, Grant No. 657054). E.Y. and J.S.S. were supported by the KACST-KAUST-UCSB Solid State Lighting Program. Additional support was provided by the National Science Foundation IMI Program (Grant No. DMR08-43934). Computational resources were provided by the National Energy Research Scientific Computing Center, which is supported by the DOE Office of Science under Contract No. DE-AC02-05CH11231.en
dc.publisherJapan Society of Applied Physicsen
dc.titleCalcium as a nonradiative recombination center in InGaNen
dc.typeArticleen
dc.identifier.journalApplied Physics Expressen
dc.contributor.institutionDepartment of Physics, University of California, Santa Barbara, CA 93106-9530, U.S.A.en
dc.contributor.institutionMaterials Department, University of California, Santa Barbara, CA 93106-5050, U.S.A.en
dc.contributor.institutionDepartment of Physics and Astronomy, Rutgers University, Piscataway, NJ 08845-0849, U.S.A.en
dc.contributor.institutionCenter for Physical Sciences and Technology, Vilnius LT-10257, Lithuaniaen
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